Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMP2022LSS-13 MOSFET P-CH 20V 10A 8SOP Diodes Incorporated	2,500 In Stock	1 : £0.82000 Cut Tape (CT) 2,500 : £0.20404 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	2.5V, 10V	13mOhm @ 10A, 10V	1.1V @ 250µA	56.9 nC @ 10 V	±12V	2444 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDS4465 MOSFET P-CH 20V 13.5A 8SOIC onsemi	6,676 In Stock	1 : £1.48000 Cut Tape (CT) 2,500 : £0.41815 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	13.5A (Ta)	1.8V, 4.5V	8.5mOhm @ 13.5A, 4.5V	1.5V @ 250µA	120 nC @ 4.5 V	±8V	8237 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BSO201SPHXUMA1 MOSFET P-CH 20V 12A 8DSO Infineon Technologies	9,722 In Stock	1 : £1.62000 Cut Tape (CT) 2,500 : £0.46768 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	20 V	12A (Ta)	2.5V, 4.5V	8mOhm @ 14.9A, 4.5V	1.2V @ 250µA	88 nC @ 4.5 V	±12V	9600 pF @ 15 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
DMG4413LSS-13 MOSFET P-CH 30V 10.5A 8SOP Diodes Incorporated	2,407 In Stock 22,500 Factory	1 : £1.07000 Cut Tape (CT) 2,500 : £0.27790 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	10.5A (Ta)	4.5V, 10V	7.5mOhm @ 13A, 10V	2.1V @ 250µA	46 nC @ 5 V	±20V	4965 pF @ 15 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4477DY-T1-GE3 MOSFET P-CH 20V 26.6A 8SO Vishay Siliconix	5,068 In Stock	1 : £1.46000 Cut Tape (CT) 2,500 : £0.41342 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	26.6A (Tc)	2.5V, 4.5V	6.2mOhm @ 18A, 4.5V	1.5V @ 250µA	190 nC @ 10 V	±12V	4600 pF @ 10 V	-	3W (Ta), 6.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRF7425TRPBF MOSFET P-CH 20V 15A 8SO Infineon Technologies	28,668 In Stock	1 : £1.24000 Cut Tape (CT) 4,000 : £0.32117 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	15A (Ta)	2.5V, 4.5V	8.2mOhm @ 15A, 4.5V	1.2V @ 250µA	130 nC @ 4.5 V	±12V	7980 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7410TRPBF MOSFET P-CH 12V 16A 8SO Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	12 V	16A (Ta)	1.8V, 4.5V	7mOhm @ 16A, 4.5V	900mV @ 250µA	91 nC @ 4.5 V	±8V	8676 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.