Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V150 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)13A (Tc)37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
47.5mOhm @ 10A, 10V144mOhm @ 1.9A, 10V290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 10 V48 nC @ 10 V66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
105 pF @ 30 V860 pF @ 25 V1805 pF @ 75 V
Power Dissipation (Max)
1.6W (Tc)3.8W (Ta), 110W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKPowerPAK® SO-8SOT-23-3 (TO-236)
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIR401DP-T1-GE3
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
Vishay Siliconix
14,402
In Stock
1 : £1.87000
Cut Tape (CT)
3,000 : £0.53433
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
37A (Tc)
10V
47.5mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1805 pF @ 75 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT-23-3
SI2308CDS-T1-GE3
MOSFET N-CH 60V 2.6A SOT23-3
Vishay Siliconix
0
In Stock
Check Lead Time
1 : £0.41000
Cut Tape (CT)
3,000 : £0.09081
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.6A (Tc)
4.5V, 10V
144mOhm @ 1.9A, 10V
3V @ 250µA
4 nC @ 10 V
±20V
105 pF @ 30 V
-
1.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF6215STRLPBF
MOSFET P-CH 150V 13A D2PAK
Infineon Technologies
0
In Stock
1 : £1.92000
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
150 V
13A (Tc)
10V
290mOhm @ 6.6A, 10V
4V @ 250µA
66 nC @ 10 V
±20V
860 pF @ 25 V
-
3.8W (Ta), 110W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.