Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	RUM001L02T2CL MOSFET N-CH 20V 100MA VMT3 Rohm Semiconductor	621,971 In Stock	1 : £0.24000 Cut Tape (CT) 8,000 : £0.03379 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.2V, 4.5V	3.5Ohm @ 100mA, 4.5V	1V @ 100µA	-	±8V	7.1 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VMT3	SOT-723
	EPC2010C GANFET N-CH 200V 22A DIE OUTLINE EPC	4,372 In Stock	1 : £6.36000 Cut Tape (CT) 2,500 : £2.72318 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	200 V	22A (Ta)	5V	25mOhm @ 12A, 5V	2.5V @ 3mA	5.3 nC @ 5 V	+6V, -4V	540 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.