Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	CSD13381F4 MOSFET N-CH 12V 2.1A 3PICOSTAR Texas Instruments	430,996 In Stock	1 : £0.27000 Cut Tape (CT) 3,000 : £0.04119 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	2.1A (Ta)	1.8V, 4.5V	180mOhm @ 500mA, 4.5V	1.1V @ 250µA	1.4 nC @ 4.5 V	8V	200 pF @ 6 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PICOSTAR	3-XFDFN
	SSM3K324R,LF MOSFET N-CH 30V 4A SOT-23F Toshiba Semiconductor and Storage	24,611 In Stock	1 : £0.28000 Cut Tape (CT) 3,000 : £0.05694 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	1.8V, 4.5V	55mOhm @ 4A, 4.5V	-	-	±12V	190 pF @ 30 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.