Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	EPC2059 TRANS GAN 170V DIE .009OHM EPC	796 In Stock	1 : £3.33000 Cut Tape (CT) 2,500 : £1.16932 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	170 V	24A (Ta)	5V	9mOhm @ 10A, 5V	2.5V @ 3mA	7.4 nC @ 5 V	+6V, -4V	836 pF @ 85 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
	EPC2302 TRANS GAN 100V DIE .0018OHM EPC	0 In Stock Check Lead Time	1 : £6.05000 Cut Tape (CT) 3,000 : £2.76866 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	101A (Ta)	5V	1.8mOhm @ 50A, 5V	2.5V @ 14mA	23 nC @ 5 V	+6V, -4V	3200 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)	7-PowerWQFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.