Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
2N7002K-7 MOSFET N-CH 60V 380MA SOT23-3 Diodes Incorporated	43,388 In Stock	1 : £0.14000 Cut Tape (CT) 3,000 : £0.02710 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	380mA (Ta)	5V, 10V	2Ohm @ 500mA, 10V	2.5V @ 1mA	0.3 nC @ 4.5 V	±20V	50 pF @ 25 V	-	370mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2N7002KT1G MOSFET N-CH 60V 320MA SOT23-3 onsemi	205,385 In Stock	1 : £0.15000 Cut Tape (CT) 3,000 : £0.02905 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	320mA (Ta)	4.5V, 10V	1.6Ohm @ 500mA, 10V	2.3V @ 250µA	0.7 nC @ 4.5 V	±20V	24.5 pF @ 20 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
TSM2N7002AKCX RFG 60V, 0.3A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	2,241 In Stock	1 : £0.15000 Cut Tape (CT) 3,000 : £0.03028 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	2.5Ohm @ 300mA, 10V	2.5V @ 250µA	1.65 nC @ 10 V	±20V	20 pF @ 30 V	-	357mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RD3P050SNTL1 MOSFET N-CH 100V 5A TO252 Rohm Semiconductor	4,282 In Stock	1 : £1.05000 Cut Tape (CT) 2,500 : £0.27946 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5A (Ta)	4V, 10V	190mOhm @ 5A, 10V	2.5V @ 1mA	14 nC @ 10 V	±20V	530 pF @ 25 V	-	15W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002 60V 115MA 7.5@10V,500MA 225MW N Shenzhen Slkormicro Semicon Co., Ltd.	22,476 In Stock	1 : £0.07000 Cut Tape (CT) 3,000 : £0.01236 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	225mW	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.