Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)310mA (Ta)3.8A (Ta)4.2A (Ta)4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
50mOhm @ 6A, 10V52mOhm @ 4.2A, 4.5V65mOhm @ 3.8A, 10V3Ohm @ 115mA, 10V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 5 V0.87 nC @ 10 V5.2 nC @ 4.5 V10.2 nC @ 4.5 V11.8 nC @ 10 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V36 pF @ 25 V563 pF @ 25 V642 pF @ 25 V808 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)350mW (Ta), 1.14W (Tc)370mW (Ta)1.08W (Ta)1.38W (Ta)1.4W (Ta)
Supplier Device Package
SOT-23-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

Showing
of 6
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
616,562
In Stock
1 : £0.11000
Cut Tape (CT)
3,000 : £0.02180
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG2305UX-13
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
76,074
In Stock
360,000
Factory
1 : £0.15000
Cut Tape (CT)
10,000 : £0.03498
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP3099L-7
MOSFET P-CH 30V 3.8A SOT23
Diodes Incorporated
191,590
In Stock
1 : £0.16000
Cut Tape (CT)
3,000 : £0.04322
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
65mOhm @ 3.8A, 10V
2.1V @ 250µA
5.2 nC @ 4.5 V
±20V
563 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP3056L-7
MOSFET P-CH 30V 4.3A SOT23
Diodes Incorporated
70,388
In Stock
1 : £0.30000
Cut Tape (CT)
3,000 : £0.08253
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
50mOhm @ 6A, 10V
2.1V @ 250µA
11.8 nC @ 10 V
±25V
642 pF @ 25 V
-
1.38W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSS84AKVL
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
18,831
In Stock
1 : £0.09000
Cut Tape (CT)
10,000 : £0.01940
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
5V, 10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN65D8LQ-7
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
25,995
In Stock
291,000
Factory
1 : £0.10000
Cut Tape (CT)
3,000 : £0.02557
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
0.87 nC @ 10 V
±20V
22 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.