Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TPH2R608NH,L1Q MOSFET N-CH 75V 150A 8SOP Toshiba Semiconductor and Storage	100,058 In Stock	1 : £1.60000 Cut Tape (CT) 5,000 : £0.43890 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	75 V	150A (Tc)	10V	2.6mOhm @ 50A, 10V	4V @ 1mA	72 nC @ 10 V	±20V	6000 pF @ 37.5 V	-	142W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
TPH2R306NH1,LQ UMOS9 SOP-ADV(N) PD=170W F=1MHZ Toshiba Semiconductor and Storage	11,325 In Stock	1 : £1.77000 Cut Tape (CT) 5,000 : £0.50474 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	136A (Tc)	6.5V, 10V	2.3mOhm @ 50A, 10V	4V @ 1mA	72 nC @ 10 V	±20V	6100 pF @ 30 V	-	800mW (Ta), 170W (Tc)	150°C	-	-	Surface Mount	8-SOP Advance (5x5.75)	8-PowerTDFN
TPH1R306P1,L1Q MOSFET N-CH 60V 100A 8SOP Toshiba Semiconductor and Storage	15,069 In Stock	1 : £2.48000 Cut Tape (CT) 5,000 : £0.80099 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	1.28mOhm @ 50A, 10V	2.5V @ 1mA	91 nC @ 10 V	±20V	8100 pF @ 30 V	-	960mW (Ta), 170W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
DMT6008LFG-7 MOSFET N-CH 60V 13A PWRDI3333 Diodes Incorporated	16,438 In Stock 462,000 Factory	1 : £1.01000 Cut Tape (CT) 2,000 : £0.26987 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 60A (Tc)	4.5V, 10V	7.5mOhm @ 20A, 10V	2V @ 250µA	50.4 nC @ 10 V	±12V	2713 pF @ 30 V	-	2.2W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.