270A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
FDB0300N1007L
FDB0190N807L
MOSFET N-CH 80V 270A TO263-7
onsemi
371
In Stock
1 : £4.04000
Cut Tape (CT)
800 : £2.04050
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
270A (Tc)
8V, 10V
1.7mOhm @ 34A, 10V
4V @ 250µA
249 nC @ 10 V
±20V
19110 pF @ 40 V
-
3.8W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-7, D2PAK (6 Leads + Tab)
SOT-1235
PSMN1R8-80SSFJ
NEXTPOWER 80/100V MOSFETS
Nexperia USA Inc.
1,751
In Stock
1 : £5.06000
Cut Tape (CT)
2,000 : £1.84828
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
270A (Tc)
7V, 10V
1.8mOhm @ 25A, 10V
4V @ 1mA
222 nC @ 10 V
±20V
15319 pF @ 40 V
-
341W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
8-PowerSFN
DMTH8001STLWQ-13
MOSFET BVDSS: 61V~100V POWERDI10
Diodes Incorporated
3,013
In Stock
16,500
Factory
1 : £4.32000
Cut Tape (CT)
1,500 : £1.87139
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
270A (Tc)
10V
1.7mOhm @ 30A, 10V
4V @ 250µA
138 nC @ 10 V
±20V
8894 pF @ 50 V
-
6W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI1012-8
8-PowerSFN
3,990
In Stock
1 : £2.85000
Cut Tape (CT)
2,000 : £1.13160
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
6V, 10V
2mOhm @ 30A, 10V
4.4V @ 250µA
135.6 nC @ 10 V
±20V
8010 pF @ 25 V
-
391W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TOLL-8L
8-PowerSFN
TO-247
IXFH270N06T3
MOSFET N-CH 60V 270A TO247
IXYS
345
In Stock
1 : £6.42000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
270A (Tc)
10V
3.1mOhm @ 100A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
12600 pF @ 25 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
PSMNR82-30YLEX
PSMNR89-25YLEX
PSMNR89-25YLE/SOT669/LFPAK
Nexperia USA Inc.
0
In Stock
Check Lead Time
1 : £2.20000
Cut Tape (CT)
1,500 : £0.72601
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
270A (Tc)
7V, 10V
0.98mOhm @ 25A, 10V
2.2V @ 2mA
120 nC @ 10 V
±20V
7452 pF @ 12 V
-
224W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
0
In Stock
Check Lead Time
1 : £16.72000
Cut Tape (CT)
750 : £9.71243
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
270A (Tc)
10V
8mOhm @ 125A, 10V
4.7V @ 3.24mA
375 nC @ 10 V
±20V
18004 pF @ 400 V
-
1.249kW (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
0
In Stock
Check Lead Time
2,000 : £1.09926
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
6V, 10V
1.3mOhm @ 30A, 10V
4V @ 250µA
135.6 nC @ 10 V
±20V
8010 pF @ 25 V
-
468W (Tj)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TOLL-8L
8-PowerSFN
8-PowerSFN
DMTH8001STLW-13
MOSFET BVDSS: 61V~100V POWERDI10
Diodes Incorporated
0
In Stock
Check Lead Time
1,500 : £1.84168
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
80 V
270A (Tc)
10V
1.7mOhm @ 30A, 10V
4V @ 250µA
138 nC @ 10 V
±20V
8894 pF @ 50 V
-
6W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
POWERDI1012-8
8-PowerSFN
TO-263AB
IXTA270N04T4
MOSFET N-CH 40V 270A TO263AA
IXYS
0
In Stock
50 : £2.76360
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
2.2mOhm @ 50A, 10V
4V @ 250µA
182 nC @ 10 V
±15V
9140 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-7
IXTA270N04T4-7
MOSFET N-CH 40V 270A TO263-7
IXYS
0
In Stock
50 : £2.76360
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
2.2mOhm @ 50A, 10V
4V @ 250µA
182 nC @ 10 V
±15V
9140 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7 (IXTA)
TO-263-7, D2PAK (6 Leads + Tab)
TO-220-3
IXTP270N04T4
MOSFET N-CH 40V 270A TO220AB
IXYS
0
In Stock
1 : £3.36000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
2.4mOhm @ 50A, 10V
4V @ 250µA
182 nC @ 10 V
±15V
9140 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-247
IXTH270N04T4
MOSFET N-CH 40V 270A TO247
IXYS
0
In Stock
30 : £3.43067
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
2.4mOhm @ 50A, 10V
4V @ 250µA
182 nC @ 10 V
±15V
9140 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-220-3
IXFP270N06T3
MOSFET N-CH 60V 270A TO220AB
IXYS
0
In Stock
50 : £3.57360
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
270A (Tc)
10V
3.1mOhm @ 100A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
12600 pF @ 25 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-263AB
IXFA270N06T3
MOSFET N-CH 60V 270A TO263AA
IXYS
0
In Stock
1 : £4.55000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
270A (Tc)
10V
3.1mOhm @ 100A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
12600 pF @ 25 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerSO-10
STV270N4F3
MOSFET N-CH 40V 270A 10POWERSO
STMicroelectronics
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
1.5mOhm @ 80A, 10V
4V @ 250µA
150 nC @ 10 V
±20V
7500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
Showing
of 16

270A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.