26A (Tc) Single FETs, MOSFETs

Results: 149
Manufacturer
Alpha & Omega Semiconductor Inc.Analog Power Inc.Diodes IncorporatedGoford SemiconductorInfineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyMicrosemi CorporationNexperia USA Inc.NXP SemiconductorsonsemiRenesas Electronics CorporationRohm Semiconductor
Series
-CoolMOS™ P7CoolSiC™CoolSIC™ M1DeepGATE™, STripFET™ VIHEXFET®HiPerFET™HiPerFET™, PolarHiPerFET™, Polar3™HiPerFET™, PolarHT™HiPerFET™, Ultra XHiPerFET™, Ultra X2
Packaging
BoxBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveLast Time BuyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
12 V30 V40 V55 V60 V80 V100 V150 V200 V250 V300 V400 V500 V550 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V5V5V, 10V6.5V, 10V7V, 10V8V, 10V10V10V, 12V12V15V, 18V18V-
Rds On (Max) @ Id, Vgs
3.8mOhm @ 26A, 10V4.4mOhm @ 13A, 10V7.5mOhm @ 13A, 10V8.5mOhm @ 5A, 4.5V11.4mOhm @ 13A, 10V14mOhm @ 5A, 10V18mOhm @ 10A, 10V18mOhm @ 12A, 10V25mOhm @ 13A, 10V25mOhm @ 17A, 10V29mOhm @ 5A, 10V30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 1mA2V @ 250µA2.1V @ 1mA2.2V @ 20µA2.4V @ 250µA2.5V @ 200µA2.5V @ 250µA2.8V @ 250µA3.75V @ 1mA3.8V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.8 nC @ 4.5 V7.9 nC @ 10 V8 nC @ 10 V11 nC @ 5 V11.9 nC @ 10 V13.5 nC @ 5 V14.8 nC @ 4.5 V17 nC @ 10 V18.6 nC @ 10 V19 nC @ 10 V19 nC @ 18 V20 nC @ 10 V
Vgs (Max)
±8V±10V±15V±16V+18V, -15V+20V, -2V+20V, -7V±20V+21V, -4V+23V, -5V+23V, -7V±25V±30V-
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V492 pF @ 25 V624 pF @ 400 V683 pF @ 50 V707 pF @ 800 V740 pF @ 50 V744 pF @ 400 V763 pF @ 800 V840 pF @ 30 V870 pF @ 25 V1020 pF @ 25 V1100 pF @ 25 V
Power Dissipation (Max)
610mW (Ta), 61W (Tc)700mW (Ta), 42W (Tc)800mW (Ta), 142W (Tc)1.5W (Ta)1.6W (Ta)1.7W (Ta)2.1W (Ta)2.4W (Ta), 36W (Tc)2.5W (Ta), 60W (Tc)2.7W (Ta)5.2W (Ta), 64W (Tc)20W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-65°C ~ 175°C (TJ)-55°C ~ 150°C-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C150°C (TJ)175°C175°C (TJ)-
Grade
-AutomotiveMilitary
Qualification
-AEC-Q101MIL-PRF-19500/603
Mounting Type
Chassis MountSurface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
8-DFN (4.9x5.75)8-DSOP Advance8-HWSON (3.3x3.3)8-PDFN (3.15x3.1)8-SOIC8-SOP Advance (5x5)8-TSON Advance (3.1x3.1)8-WDFN (3.3x3.3)D2PAKD3PAKI-PAK (LF701)IPAK
Package / Case
3-SMD, No Lead6-UDFN Exposed Pad8-PowerTDFN8-PowerVDFN8-PowerWDFN8-SOIC (0.154", 3.90mm Width)ISOTOPPLUS-220SMDPowerPAK® SO-8SC-100, SOT-669SOT-1210, 8-LFPAK33 (5-Lead)SOT-227-4, miniBLOC
Stocking Options
Environmental Options
Media
Marketplace Product
149Results
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Showing
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type F
DMP1005UFDF-7
MOSFET P-CH 12V 26A 6UDFN
Diodes Incorporated
9,266
In Stock
1 : £0.63000
Cut Tape (CT)
3,000 : £0.13791
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
26A (Tc)
1.8V, 4.5V
8.5mOhm @ 5A, 4.5V
1V @ 250µA
47 nC @ 8 V
±8V
2475 pF @ 6 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
12,744
In Stock
1 : £0.78000
Cut Tape (CT)
3,000 : £0.19010
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
11.4mOhm @ 13A, 10V
2.5V @ 200µA
17 nC @ 10 V
±20V
1625 pF @ 30 V
-
610mW (Ta), 61W (Tc)
175°C
-
-
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
40,294
In Stock
1 : £1.13000
Cut Tape (CT)
2,500 : £0.30274
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
40mOhm @ 20A, 10V
2.4V @ 250µA
54 nC @ 10 V
±20V
3600 pF @ 30 V
-
2.5W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FDD390N15A
MOSFET N-CH 150V 26A DPAK
onsemi
14,311
In Stock
1 : £1.45000
Cut Tape (CT)
2,500 : £0.40622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
26A (Tc)
10V
40mOhm @ 26A, 10V
4V @ 250µA
18.6 nC @ 10 V
±20V
1285 pF @ 75 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FDD390N15ALZ
MOSFET N-CH 150V 26A DPAK
onsemi
721
In Stock
1 : £1.58000
Cut Tape (CT)
2,500 : £0.45145
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
26A (Tc)
4.5V, 10V
42mOhm @ 26A, 10V
2.8V @ 250µA
39 nC @ 10 V
±20V
1760 pF @ 75 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
17,505
In Stock
1 : £2.77000
Cut Tape (CT)
5,000 : £0.93444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
26A (Tc)
10V
52mOhm @ 13A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
78W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SIR401DP-T1-GE3
SI7430DP-T1-GE3
MOSFET N-CH 150V 26A PPAK SO-8
Vishay Siliconix
5,964
In Stock
1 : £3.10000
Cut Tape (CT)
3,000 : £1.03937
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
26A (Tc)
8V, 10V
45mOhm @ 5A, 10V
4.5V @ 250µA
43 nC @ 10 V
±20V
1735 pF @ 50 V
-
5.2W (Ta), 64W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-220AB Full Pack
IRFI4227PBF
MOSFET N-CH 200V 26A TO220AB FP
Infineon Technologies
2,184
In Stock
1 : £3.27000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
25mOhm @ 17A, 10V
5V @ 250µA
110 nC @ 10 V
±30V
4600 pF @ 25 V
-
46W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
TO-263-D2PAK
IXTA26P20P-TRL
MOSFET P-CH 200V 26A TO263
Littelfuse Inc.
3,043
In Stock
1 : £6.36000
Cut Tape (CT)
800 : £2.72661
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA26P20P
MOSFET P-CH 200V 26A TO263
Littelfuse Inc.
1,625
In Stock
1 : £6.36000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
175
In Stock
1 : £13.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
2000 V
26A (Tc)
15V, 18V
131mOhm @ 10A, 18V
5.5V @ 6mA
55 nC @ 18 V
+20V, -7V
-
-
217W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
PowerPak SO-8L
SQJ474EP-T1_GE3
MOSFET N-CH 100V 26A PPAK SO-8
Vishay Siliconix
25,065
In Stock
1 : £1.19000
Cut Tape (CT)
3,000 : £0.31362
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
26A (Tc)
4.5V, 10V
30mOhm @ 10A, 10V
2.5V @ 250µA
30 nC @ 10 V
±20V
1100 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
11,620
In Stock
1 : £1.19000
Cut Tape (CT)
5,000 : £0.29837
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
6.5V, 10V
7.5mOhm @ 13A, 10V
4V @ 200µA
22 nC @ 10 V
±20V
1800 pF @ 30 V
-
700mW (Ta), 42W (Tc)
150°C (TJ)
-
-
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
8-WDFN
NVTFS5C478NLTAG
MOSFET N-CHANNEL 40V 26A 8WDFN
onsemi
2,099
In Stock
1 : £1.20000
Cut Tape (CT)
1,500 : £0.34508
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
26A (Tc)
4.5V, 10V
14mOhm @ 5A, 10V
2.2V @ 20µA
8 nC @ 10 V
±20V
400 pF @ 25 V
-
20W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NVTFS5C478NLWFTAG
MOSFET N-CHANNEL 40V 26A 8WDFN
onsemi
400
In Stock
1 : £1.40000
Cut Tape (CT)
1,500 : £0.41258
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
26A (Tc)
4.5V, 10V
14mOhm @ 5A, 10V
2.2V @ 20µA
3.8 nC @ 4.5 V
±20V
400 pF @ 25 V
-
20W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
TO-220-3
STP24NF10
MOSFET N-CH 100V 26A TO220AB
STMicroelectronics
643
In Stock
1 : £1.90000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
26A (Tc)
10V
60mOhm @ 12A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
870 pF @ 25 V
-
85W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-263
NDB5060L
MOSFET N-CH 60V 26A D2PAK
onsemi
1,257
In Stock
1 : £2.72000
Cut Tape (CT)
800 : £0.95734
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
5V, 10V
35mOhm @ 13A, 10V
2V @ 250µA
24 nC @ 5 V
±16V
840 pF @ 30 V
-
68W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO220 Full Pack
IPA60R120P7XKSA1
MOSFET N-CH 600V 26A TO220
Infineon Technologies
0
In Stock
500
Marketplace
Check Lead Time
187 : £1.27497
Bulk
1 : £3.14000
Tube
Bulk
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V
120mOhm @ 8.2A, 10V
4V @ 410µA
36 nC @ 10 V
±20V
1544 pF @ 400 V
-
28W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
SIR401DP-T1-GE3
SI7430DP-T1-E3
MOSFET N-CH 150V 26A PPAK SO-8
Vishay Siliconix
2,834
In Stock
1 : £3.16000
Cut Tape (CT)
3,000 : £1.06986
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
26A (Tc)
8V, 10V
45mOhm @ 5A, 10V
4.5V @ 250µA
43 nC @ 10 V
±20V
1735 pF @ 50 V
-
5.2W (Ta), 64W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-247
IXTH26P20P
MOSFET P-CH 200V 26A TO247
IXYS
230
In Stock
1 : £5.25000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-220-3
IXTP26P20P
MOSFET P-CH 200V 26A TO220AB
Littelfuse Inc.
1,265
In Stock
900
Factory
1 : £5.57000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-3P
IXTQ26P20P
MOSFET P-CH 200V 26A TO3P
Littelfuse Inc.
365
In Stock
1 : £5.87000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-247_IXFH
IXFH26N50P
MOSFET N-CH 500V 26A TO247AD
Littelfuse Inc.
941
In Stock
1 : £6.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
26A (Tc)
10V
230mOhm @ 13A, 10V
5.5V @ 4mA
60 nC @ 10 V
±30V
3600 pF @ 25 V
-
400W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
PG-TO263-7-12
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Infineon Technologies
2,392
In Stock
1 : £6.76000
Cut Tape (CT)
1,000 : £2.95811
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
-
125mOhm @ 8.5A, 18V
5.7V @ 3.7mA
23 nC @ 18 V
+18V, -15V
763 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMW120R090M1HXKSA1
SICFET N-CH 1.2KV 26A TO247-3
Infineon Technologies
583
In Stock
1 : £6.98000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
15V, 18V
117mOhm @ 8.5A, 18V
5.7V @ 3.7mA
21 nC @ 18 V
+23V, -7V
707 pF @ 800 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
Showing
of 149

26A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.