250mA (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
VN2450N8-G MOSFET N-CH 500V 250MA TO243AA Microchip Technology	12,926 In Stock	1 : £1.10000 Cut Tape (CT) 2,000 : £0.82581 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	250mA (Tj)	4.5V, 10V	13Ohm @ 400mA, 10V	4V @ 1mA	±20V	150 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VP2106N3-G MOSFET P-CH 60V 250MA TO92-3 Microchip Technology	4,812 In Stock	1 : £0.47000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	60 V	250mA (Tj)	5V, 10V	12Ohm @ 500mA, 10V	3.5V @ 1mA	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0104N3-G MOSFET P-CH 40V 250MA TO92-3 Microchip Technology	911 In Stock	1 : £0.75000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	40 V	250mA (Tj)	5V, 10V	8Ohm @ 500mA, 10V	3.5V @ 1mA	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0106N3-G MOSFET P-CH 60V 250MA TO92-3 Microchip Technology	1,180 In Stock	1 : £0.77000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	60 V	250mA (Tj)	5V, 10V	8Ohm @ 500mA, 10V	3.5V @ 1mA	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0109N3-G MOSFET P-CH 90V 250MA TO92-3 Microchip Technology	790 In Stock	1 : £0.85000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	90 V	250mA (Tj)	5V, 10V	8Ohm @ 500mA, 10V	3.5V @ 1mA	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0620N3-G MOSFET N-CH 200V 250MA TO92-3 Microchip Technology	423 In Stock	1 : £1.19000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	200 V	250mA (Tj)	5V, 10V	6Ohm @ 500mA, 10V	1.6V @ 1mA	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0620N3-G-P002 MOSFET N-CH 200V 250MA TO92-3 Microchip Technology	6,146 In Stock	1 : £1.26000 Cut Tape (CT) 2,000 : £0.96466 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	250mA (Tj)	5V, 10V	6Ohm @ 500mA, 10V	1.6V @ 1mA	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0620N3-G-P014 MOSFET N-CH 200V 250MA TO92-3 Microchip Technology	0 In Stock Check Lead Time	2,000 : £0.96466 Tape & Box (TB)	-	Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	250mA (Tj)	5V, 10V	6Ohm @ 500mA, 10V	1.6V @ 1mA	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IXTY02N50D-TRL MOSFET N-CH IXYS	0 In Stock	Obsolete	Depletion	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	-	-	250mA (Tj)	-	-	-	±20V	-	-	-	-	-	-	-	-	-

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.