23A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SO-8L
MOSFET N-CH 100V 23A PPAK SO-8
Vishay Siliconix
11,812
In Stock
1 : £0.99000
Cut Tape (CT)
3,000 : £0.25513
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
38mOhm @ 10A, 10V
2.5V @ 250µA
20 nC @ 10 V
±20V
700 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SISS5808DN-T1-GE3
MOSFET P-CH 100V 23A PPAK1212-8S
Vishay Siliconix
32,538
In Stock
1 : £1.22000
Cut Tape (CT)
3,000 : £0.32623
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
59mOhm @ 5A, 10V
2.5V @ 250µA
15 nC @ 4.5 V
±20V
1050 pF @ 50 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
IRFB4127PBFXKMA1
MOSFET P-CH 100V 23A TO220AB
Infineon Technologies
13,068
In Stock
1 : £1.44000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 11A, 10V
4V @ 250µA
97 nC @ 10 V
±20V
1300 pF @ 25 V
-
140W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET P-CH 100V 23A D2PAK
Infineon Technologies
3,937
In Stock
1 : £1.73000
Cut Tape (CT)
800 : £0.56913
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 14A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
1450 pF @ 25 V
-
3.1W (Ta), 110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO220-3-1
MOSFET N-CH 600V 23A TO220-3
Infineon Technologies
1,204
In Stock
1 : £7.68000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
12V
22mOhm @ 23A, 12V
4.5V @ 1.44mA
150 nC @ 12 V
±20V
5639 pF @ 300 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
PowerPak SO-8L
MOSFET N-CH 60V 23A PPAK SO-8
Vishay Siliconix
6,929
In Stock
1 : £0.82000
Cut Tape (CT)
3,000 : £0.20503
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Tc)
4.5V, 10V
33mOhm @ 7A, 10V
2.5V @ 250µA
30 nC @ 10 V
±20V
1100 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
3,007
In Stock
1 : £1.12000
Cut Tape (CT)
2,500 : £0.30081
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Tc)
4.5V, 10V
31mOhm @ 15A, 10V
3V @ 250µA
17 nC @ 10 V
±20V
670 pF @ 25 V
-
3W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
MOSFET N-CH 100V 23A DPAK
STMicroelectronics
3,830
In Stock
1 : £1.25000
Cut Tape (CT)
2,500 : £0.34370
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
65mOhm @ 12A, 10V
4V @ 250µA
40 nC @ 10 V
±20V
870 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
BUK7626-100B,118
MOSFET N-CH 100V 23A D2PAK
Nexperia USA Inc.
11,960
In Stock
1 : £1.59000
Cut Tape (CT)
800 : £0.43864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
5V, 10V
72mOhm @ 10A, 10V
2V @ 1mA
-
±15V
1704 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
MOSFET N-CH 550V 23A TO263-3
Infineon Technologies
1,356
In Stock
1 : £3.41000
Cut Tape (CT)
1,000 : £1.21037
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
550 V
23A (Tc)
10V
140mOhm @ 14A, 10V
3.5V @ 930µA
64 nC @ 10 V
±20V
2540 pF @ 100 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-3PN
MOSFET N-CH 400V 23A TO3PN
onsemi
2,558
In Stock
1 : £3.80000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
23A (Tc)
10V
190mOhm @ 11.5A, 10V
5V @ 250µA
60 nC @ 10 V
±30V
3030 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3PN
TO-3P-3, SC-65-3
523
In Stock
1 : £5.25915
Cut Tape (CT)
250 : £2.33259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
GaNFET (Gallium Nitride)
700 V
23A (Tc)
6V
90mOhm @ 5.5A, 6V
2.6V @ 4.8mA
4.2 nC @ 6 V
+7V, -10V
132 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (8x8)
8-VDFN Exposed Pad
4,185
In Stock
1 : £1.08000
Cut Tape (CT)
2,500 : £0.28966
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Tc)
4.5V, 10V
12mOhm @ 10A, 10V
2.5V @ 250µA
37 nC @ 10 V
±20V
2193 pF @ 30 V
-
12.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
SIHD5N80AE-GE3
MOSFET N-CH 60V 23A TO252
Vishay Siliconix
3,147
In Stock
1 : £1.77000
Cut Tape (CT)
2,000 : £0.52869
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Tc)
4.5V, 10V
31mOhm @ 15A, 10V
2.5V @ 250µA
24 nC @ 10 V
±20V
845 pF @ 25 V
-
37W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-3
MOSFET N-CH 100V 23A DPAK
onsemi
4,976
In Stock
1 : £2.04000
Cut Tape (CT)
2,500 : £0.61209
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
52mOhm @ 10A, 10V
2V @ 250µA
35 nC @ 10 V
±20V
1024 pF @ 25 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO220-3-1
MOSFET N-CH 550V 23A TO220-3
Infineon Technologies
178
In Stock
1 : £3.30000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
550 V
23A (Tc)
10V
140mOhm @ 14A, 10V
3.5V @ 930µA
64 nC @ 10 V
±20V
2540 pF @ 100 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
TO-220-3
600V 23A TO-220FM, PRESTOMOS WIT
Rohm Semiconductor
735
In Stock
1 : £3.32000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V, 15V
71mOhm @ 16A, 15V
6.5V @ 1.5mA
80 nC @ 10 V
±30V
3700 pF @ 100 V
-
100W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220FM
TO-220-3 Full Pack
TO-263-3
MOSFET N-CH 600V 23A D2PAK
Vishay Siliconix
1,086
In Stock
1 : £3.61000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
158mOhm @ 12A, 10V
4V @ 250µA
95 nC @ 10 V
±30V
2418 pF @ 100 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-HSOF-8-2
MOSFET N-CH 600V 23A 8HSOF
Infineon Technologies
1,005
In Stock
1 : £3.78000
Cut Tape (CT)
2,000 : £1.39339
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
102mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1320 pF @ 400 V
-
141W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
IRFP254PBF
MOSFET N-CH 250V 23A TO247-3
Vishay Siliconix
2,918
In Stock
1 : £4.22000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
23A (Tc)
10V
140mOhm @ 14A, 10V
4V @ 250µA
140 nC @ 10 V
±20V
2700 pF @ 25 V
-
190W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-220F-3
MOSFET N-CH 800V 23A TO220F
onsemi
768
In Stock
2,000
Factory
1 : £5.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
23A (Tc)
10V
220mOhm @ 11.5A, 10V
4.5V @ 2.3mA
105 nC @ 10 V
±20V
4560 pF @ 100 V
-
44W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
TO-247-3-PKG-Series
MOSFET N-CH 800V 23A TO247
Microchip Technology
252
In Stock
1 : £6.51000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
23A (Tc)
10V
500mOhm @ 12A, 10V
5V @ 1mA
150 nC @ 10 V
±30V
4595 pF @ 25 V
-
625W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 [B]
TO-247-3
SQJA80EP-T1_GE3
N-CHANNEL 100-V (D-S) 175C MOSFE
Vishay Siliconix
2,447
In Stock
1 : £0.99000
Cut Tape (CT)
3,000 : £0.25513
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
4.5V, 10V
38mOhm @ 10A, 10V
2.5V @ 250µA
20 nC @ 10 V
±20V
700 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
9,990
In Stock
1 : £1.52000
Cut Tape (CT)
2,500 : £0.40444
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Tc)
5V, 10V
27mOhm @ 11.5A, 10V
2.5V @ 250µA
41 nC @ 10 V
±20V
1800 pF @ 25 V
-
1W (Ta), 60W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
SIHP23N60E-GE3
MOSFET N-CH 600V 23A TO220AB
Vishay Siliconix
803
In Stock
1 : £3.12000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
10V
158mOhm @ 12A, 10V
4V @ 250µA
95 nC @ 10 V
±30V
2418 pF @ 100 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
Showing
of 148

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.