230mA (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
VN2222LL-G MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	9,278 In Stock	1 : £0.40000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 1mA	±30V	60 pF @ 25 V	-	400mW (Ta), 1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN3535N8-G MOSFET N-CH 350V 230MA TO243AA Microchip Technology	3,721 In Stock	1 : £0.67000 Cut Tape (CT) 2,000 : £0.51206 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	350 V	230mA (Tj)	0V	10Ohm @ 150mA, 0V	-	±20V	360 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VN2222LL-G-P003 MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	2,336 In Stock	1 : £0.47000 Cut Tape (CT) 2,000 : £0.35809 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 1mA	±30V	60 pF @ 25 V	-	400mW (Ta), 1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
VN2222LL-G-P013 MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	1,497 In Stock	1 : £0.47000 Cut Tape (CT) 2,000 : £0.36363 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 1mA	±30V	60 pF @ 25 V	-	400mW (Ta), 1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7008-G MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	1,151 In Stock	1 : £0.50000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	±30V	50 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2450N8-G MOSFET N-CH 500V 230MA TO243AA Microchip Technology	1,187 In Stock	1 : £0.67000 Cut Tape (CT) 2,000 : £0.51206 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	230mA (Tj)	0V	10Ohm @ 300mA, 0V	-	±20V	200 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TN5335N8-G MOSFET N-CH 350V 230MA TO243AA Microchip Technology	1,216 In Stock	1 : £0.85000 Cut Tape (CT) 2,000 : £0.64563 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	350 V	230mA (Tj)	3V, 10V	15Ohm @ 200mA, 10V	2V @ 1mA	±20V	110 pF @ 25 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VN1206L-G MOSFET N-CH 120V 230MA TO92-3 Microchip Technology	547 In Stock	1 : £1.58000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	120 V	230mA (Tj)	2.5V, 10V	6Ohm @ 500mA, 10V	2V @ 1mA	±30V	125 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN1206L-G-P002 MOSFET N-CH 120V 230MA TO92-3 Microchip Technology	0 In Stock Check Lead Time	2,000 : £0.77179 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120 V	230mA (Tj)	2.5V, 10V	6Ohm @ 500mA, 10V	2V @ 1mA	±30V	125 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.