23.8A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPB60R160C6ATMA1 MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies	3,220 In Stock	1 : £3.46000 Cut Tape (CT) 1,000 : £1.25316 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA60R160P6XKSA1 MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies	389 In Stock	1 : £3.11000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPA60R160C6XKSA1 MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies	995 In Stock	1 : £3.46000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW60R160P6FKSA1 MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies	239 In Stock	240 : £1.51679 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPP60R160P6XKSA1 MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies	338 In Stock	1 : £3.11000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPP60R160C6XKSA1 MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies	488 In Stock	1 : £3.46000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPB60R160P6ATMA1 MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies	2,219 In Stock	1 : £3.11000 Cut Tape (CT) 1,000 : £1.09682 Tape & Reel (TR)	CoolMOS™ P6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R160C6FKSA1 MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies	56 In Stock	1 : £4.03000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3

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23.8A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.