23.8A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPB60R160C6ATMA1 MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies	1,965 In Stock	1 : £3.15000 Cut Tape (CT) 1,000 : £1.08643 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R160P6ATMA1 MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies	194 In Stock	1 : £2.83661 Cut Tape (CT) 1,000 : £0.95995 Tape & Reel (TR)	CoolMOS™ P6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA60R160C6XKSA1 MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies	695 In Stock	1 : £3.05000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPA60R160P6XKSA1 MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies	388 In Stock	1 : £2.50426 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW60R160P6FKSA1 MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies	77 In Stock	1 : £3.18000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPP60R160C6XKSA1 MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies	0 In Stock	1 : £3.05000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPW60R160C6FKSA1 MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies	19 In Stock	1 : £3.55000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPP60R160P6XKSA1 MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies	0 In Stock Check Lead Time	1 : £2.50000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 9A, 10V	4.5V @ 750µA	44 nC @ 10 V	±20V	2080 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.