22A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TSM150P04LCS RLG MOSFET P-CHANNEL 40V 22A 8SOP Taiwan Semiconductor Corporation	15,668 In Stock	1 : £0.97000 Cut Tape (CT) 2,500 : £0.25473 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	22A (Tc)	4.5V, 10V	15mOhm @ 9A, 10V	2.5V @ 250µA	48 nC @ 10 V	±20V	2783 pF @ 20 V	-	12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FDP22N50N MOSFET N-CH 500V 22A TO220-3 onsemi	1,566 In Stock	1 : £3.54000 Tube	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	220mOhm @ 11A, 10V	5V @ 250µA	65 nC @ 10 V	±30V	3200 pF @ 25 V	-	312.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
STP30N65M5 MOSFET N-CH 650V 22A TO220AB STMicroelectronics	602 In Stock	1 : £5.67000 Tube	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	139mOhm @ 11A, 10V	5V @ 250µA	64 nC @ 10 V	±25V	2880 pF @ 100 V	-	140W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
AOTF2910L MOSFET N-CH 100V 22A TO220-3F Alpha & Omega Semiconductor Inc.	13,654 In Stock	1 : £1.33000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	22A (Tc)	4.5V, 10V	24mOhm @ 20A, 10V	2.7V @ 250µA	15 nC @ 10 V	±20V	1190 pF @ 50 V	-	2.1W (Ta), 27W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220F	TO-220-3 Full Pack
IPD650P06NMATMA1 MOSFET P-CH 60V 22A TO252-3 Infineon Technologies	6,946 In Stock	1 : £1.54000 Cut Tape (CT) 2,500 : £0.43938 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	22A (Tc)	10V	65mOhm @ 22A, 10V	4V @ 1.04mA	39 nC @ 10 V	±20V	1600 pF @ 30 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
STB28N60M2 MOSFET N-CH 600V 22A D2PAK STMicroelectronics	1,652 In Stock	1 : £1.94000 Cut Tape (CT) 1,000 : £0.63615 Tape & Reel (TR)	MDmesh™ II Plus	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	36 nC @ 10 V	±25V	1440 pF @ 100 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FQB22P10TM MOSFET P-CH 100V 22A D2PAK onsemi	2,205 In Stock	1 : £2.03000 Cut Tape (CT) 800 : £0.68686 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	22A (Tc)	10V	125mOhm @ 11A, 10V	4V @ 250µA	50 nC @ 10 V	±30V	1500 pF @ 25 V	-	3.75W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPL60R115CFD7AUMA1 HIGH POWER_NEW Infineon Technologies	381 In Stock	1 : £3.29000 Cut Tape (CT) 3,000 : £1.15239 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	-	-	22A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-VSON-4	4-PowerTSFN
IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies	2,461 In Stock	1 : £4.89000 Cut Tape (CT) 3,000 : £1.96610 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	22A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	111W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount, Wettable Flank	PG-TSON-8-U06	8-TDFN Exposed Pad
IRFP22N50APBF MOSFET N-CH 500V 22A TO247-3 Vishay Siliconix	671 In Stock	1 : £6.19000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	230mOhm @ 13A, 10V	4V @ 250µA	120 nC @ 10 V	±30V	3450 pF @ 25 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
G3R160MT12D SIC MOSFET N-CH 22A TO247-3 Navitas Semiconductor, Inc.	1,414 In Stock	1 : £7.21000 Tube	G3R™	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	15V	192mOhm @ 10A, 15V	2.69V @ 5mA	28 nC @ 15 V	±15V	730 pF @ 800 V	-	123W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SCT2160KEGC11 1200V, 22A, THD, SILICON-CARBIDE Rohm Semiconductor	140 In Stock	1 : £10.63000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	18V	208mOhm @ 7A, 18V	4V @ 2.5mA	62 nC @ 18 V	+22V, -6V	1200 pF @ 800 V	-	165W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
FDD3690 MOSFET N-CH 100V 22A DPAK onsemi	2,636 In Stock	1 : £2.04000 Cut Tape (CT) 2,500 : £0.61381 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	22A (Tc)	6V, 10V	64mOhm @ 5.4A, 10V	4V @ 250µA	39 nC @ 10 V	±20V	1514 pF @ 50 V	-	3.8W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
STP31N65M5 MOSFET N-CH 650V 22A TO220 STMicroelectronics	319 In Stock	1 : £3.49000 Tube	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	148mOhm @ 11A, 10V	5V @ 250µA	45 nC @ 10 V	±25V	816 pF @ 100 V	-	150W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IPB65R110CFD7ATMA1 HIGH POWER_NEW Infineon Technologies	1,204 In Stock	1 : £3.61000 Cut Tape (CT) 1,000 : £1.30591 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	110mOhm @ 9.7A, 10V	4.5V @ 480µA	41 nC @ 10 V	±20V	1942 pF @ 400 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STF31N65M5 MOSFET N-CH 650V 22A TO220FP STMicroelectronics	1,056 In Stock	1 : £3.73000 Tube	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	148mOhm @ 11A, 10V	5V @ 250µA	45 nC @ 10 V	±25V	816 pF @ 100 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
IPW65R110CFD7XKSA1 HIGH POWER_NEW Infineon Technologies	241 In Stock	1 : £3.99000 Tube	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	110mOhm @ 9.7A, 10V	4.5V @ 480µA	41 nC @ 10 V	±20V	1942 pF @ 400 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IXFP22N65X2M MOSFET N-CH 650V 22A TO220 IXYS	276 In Stock 500 Factory	1 : £4.39000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	145mOhm @ 11A, 10V	5V @ 1.5mA	37 nC @ 10 V	±30V	2190 pF @ 25 V	-	37W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IPZ60R099C7XKSA1 MOSFET N-CH 600V 22A TO247-4 Infineon Technologies	336 In Stock	1 : £4.63000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	99mOhm @ 9.7A, 10V	4V @ 490µA	42 nC @ 10 V	±20V	1819 pF @ 400 V	-	110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4	TO-247-4
STW30N65M5 MOSFET N-CH 650V 22A TO247-3 STMicroelectronics	600 In Stock	1 : £4.69436 Tube	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	139mOhm @ 11A, 10V	5V @ 250µA	64 nC @ 10 V	±25V	2880 pF @ 100 V	-	140W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IXFP22N65X2 MOSFET N-CH 650V 22A TO220 IXYS	4,990 In Stock	1 : £4.73000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	160mOhm @ 11A, 10V	5.5V @ 1.5mA	38 nC @ 10 V	±30V	2310 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFA22N65X2 MOSFET N-CH 650V 22A TO263 IXYS	5,377 In Stock 200 Factory	1 : £4.88000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	160mOhm @ 11A, 10V	5.5V @ 1.5mA	38 nC @ 10 V	±30V	2310 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ22N50P MOSFET N-CH 500V 22A TO3P IXYS	323 In Stock	1 : £5.14000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	270mOhm @ 11A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	2630 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
STW32NM50N MOSFET N CH 500V 22A TO-247 STMicroelectronics	548 In Stock	1 : £5.49000 Tube	MDmesh™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	130mOhm @ 11A, 10V	4V @ 250µA	62.5 nC @ 10 V	±25V	1973 pF @ 50 V	-	190W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IXFH22N60P3 MOSFET N-CH 600V 22A TO247AD IXYS	1,715 In Stock 330 Factory	1 : £5.64000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	360mOhm @ 11A, 10V	5V @ 1.5mA	38 nC @ 10 V	±30V	2600 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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