200mA (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTY02N120P MOSFET N-CH 1200V 200MA TO252 IXYS	11,965 In Stock	1 : £2.32000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	75Ohm @ 500mA, 10V	4V @ 100µA	4.7 nC @ 10 V	±20V	104 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTA02N250HV MOSFET N-CH 2500V 200MA TO263AB IXYS	1,719 In Stock	1 : £10.16000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTH02N250 MOSFET N-CH 2500V 200MA TO247 IXYS	2,474 In Stock 1,140 Factory	1 : £13.72000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTT02N450HV MOSFET N-CH 4500V 200MA TO268 IXYS	1,570 In Stock	1 : £23.37000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	750Ohm @ 10mA, 10V	6.5V @ 250µA	10.4 nC @ 10 V	±20V	256 pF @ 25 V	-	113W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
2N7000TA MOSFET N-CH 60V 200MA TO92-3 onsemi	81,819 In Stock	1 : £0.37000 Cut Tape (CT) 2,000 : £0.08496 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7000BU MOSFET N-CH 60V 200MA TO92-3 onsemi	9,545 In Stock	1 : £0.37000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FQT1N80TF-WS MOSFET N-CH 800V 200MA SOT223-3 onsemi	4,667 In Stock 264,000 Factory	1 : £1.12000 Cut Tape (CT) 4,000 : £0.28641 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	200mA (Tc)	10V	20Ohm @ 100mA, 10V	5V @ 250µA	7.2 nC @ 10 V	±30V	195 pF @ 25 V	-	2.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-3
IXTP02N120P MOSFET N-CH 1200V 200MA TO220AB IXYS	524 In Stock	1 : £2.54000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	75Ohm @ 100mA, 10V	4V @ 100µA	4.7 nC @ 10 V	±20V	104 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTY02N50D MOSFET N-CH 500V 200MA TO252 IXYS	178 In Stock	1 : £2.23000 Tube	Depletion	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	200mA (Tc)	-	30Ohm @ 50mA, 0V	-	-	±20V	120 pF @ 25 V	-	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
XP231P02013R-G MOSFET P-CH 30V 200MA SOT323-3 Torex Semiconductor Ltd	2,885 In Stock	1 : £0.22000 Cut Tape (CT) 3,000 : £0.04606 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	200mA (Tc)	2.5V, 4.5V	5Ohm @ 100mA, 4.5V	1.2V @ 250µA	-	±8V	34 pF @ 10 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-323-3A	SC-70, SOT-323
IXTH02N450HV MOSFET N-CH 4500V 200MA TO247HV IXYS	62 In Stock	1 : £19.58000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	625Ohm @ 10mA, 10V	6.5V @ 250µA	10.6 nC @ 10 V	±20V	246 pF @ 25 V	-	113W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV	TO-247-3 Variant
IXTP02N50D MOSFET N-CH 500V 200MA TO220AB IXYS	32 In Stock	Obsolete	Depletion	Tube	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	200mA (Tc)	10V	30Ohm @ 50mA, 0V	5V @ 25µA	-	±20V	120 pF @ 25 V	-	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTF02N450 MOSFET N-CH 4500V 200MA I4PAC IXYS	0 In Stock Check Lead Time	1 : £31.89000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	750Ohm @ 10mA, 10V	6.5V @ 250µA	10.4 nC @ 10 V	±20V	256 pF @ 25 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS i4-PAC™	i4-Pac™-5 (3 Leads)
2N7002 MOSFET N-CH 60V 200MA SOT23-3 STMicroelectronics	0 In Stock	15,000 : £0.04040 Tape & Reel (TR)	STripFET™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 250µA	2 nC @ 5 V	±18V	43 pF @ 25 V	-	350mW (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS138W-G MOSFET N-CH 50V 0.22A SOT23-3 Comchip Technology	0 In Stock Check Lead Time	3,000 : £0.04606 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Tc)	10V	3.5Ohm @ 220A, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	200mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
IXTY02N120P-TRL MOSFET N-CH 1200V 200MA TO252 IXYS	0 In Stock Check Lead Time	2,500 : £0.72094 Tape & Reel (TR)	Polar	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	75Ohm @ 100mA, 10V	4V @ 100µA	4.7 nC @ 10 V	±20V	104 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTU02N50D MOSFET N-CH 500V 200MA TO251 IXYS	0 In Stock	350 : £0.73223 Tube	Depletion	Tube	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	200mA (Tc)	10V	30Ohm @ 50mA, 0V	5V @ 25µA	-	±20V	120 pF @ 25 V	-	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
FQT1N60CTF-WS MOSFET N-CH 600V 200MA SOT223-4 onsemi	0 In Stock	Obsolete	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	200mA (Tc)	10V	11.5Ohm @ 100mA, 10V	4V @ 250µA	6.2 nC @ 10 V	±30V	170 pF @ 25 V	-	2.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IXTA02N250 MOSFET N-CH 2500V 200MA TO263 IXYS	0 In Stock	50 : £3.82820 Tube	-	Tube	Discontinued at DigiKey	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA02N250HV-TRL MOSFET N-CH 2500V 200MA TO263HV IXYS	0 In Stock Check Lead Time	800 : £5.16840 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA02N450HV MOSFET N-CH 4500V 200MA TO263 IXYS	0 In Stock	50 : £6.56160 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	750Ohm @ 10mA, 10V	6.5V @ 250µA	10.4 nC @ 10 V	±20V	256 pF @ 25 V	-	113W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTV02N250S MOSFET N-CH 2500V 200MA PLUS220 IXYS	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PLUS-220SMD	PLUS-220SMD
2N7000BU_T MOSFET N-CH 60V 200MA TO92-3 onsemi	0 In Stock	Obsolete	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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