180A (Tc) Single FETs, MOSFETs

Results: 185
Stocking Options
Environmental Options
Media
Exclude
185Results
Applied FiltersRemove All

Showing
of 185
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 100V 180A D2PAK
Infineon Technologies
6,144
In Stock
1 : £2.74000
Cut Tape (CT)
800 : £0.97419
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
4.7mOhm @ 106A, 10V
4V @ 250µA
215 nC @ 10 V
±20V
9575 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFB4127PBFXKMA1
MOSFET N-CH 100V 180A TO220AB
Infineon Technologies
3,944
In Stock
1 : £2.87000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
4.5V, 10V
4.3mOhm @ 110A, 10V
2.5V @ 250µA
130 nC @ 4.5 V
±16V
11360 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
PG-TO263-7-3
MOSFET P-CH 40V 180A TO263-7
Infineon Technologies
18,166
In Stock
1 : £3.09000
Cut Tape (CT)
1,000 : £1.09340
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
180A (Tc)
4.5V, 10V
2.4mOhm @ 100A, 10V
2.2V @ 410µA
286 nC @ 10 V
+5V, -16V
18700 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
D2PAK-7pin
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
4,232
In Stock
1 : £3.79000
Cut Tape (CT)
1,000 : £1.24208
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
6V, 10V
2.4mOhm @ 90A, 10V
3.8V @ 183µA
138 nC @ 10 V
±20V
10200 pF @ 50 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
16,528
In Stock
1 : £4.67000
Cut Tape (CT)
1,000 : £1.84058
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
6V, 10V
1.7mOhm @ 100A, 10V
3.8V @ 279µA
210 nC @ 10 V
±20V
15600 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
PG-TO263-7
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
8,391
In Stock
1 : £4.97000
Cut Tape (CT)
1,000 : £2.00316
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
6V, 10V
2.5mOhm @ 100A, 10V
3.5V @ 275µA
206 nC @ 10 V
±20V
14800 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
PG-TO263-7
MOSFET N-CH 80V 180A TO263-7
Infineon Technologies
3,198
In Stock
1 : £4.99000
Cut Tape (CT)
1,000 : £2.01185
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
180A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.5V @ 270µA
206 nC @ 10 V
±20V
14200 pF @ 40 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
PSMNR82-30YLEX
PSMN2R0-40YLB/SOT669/LFPAK
Nexperia USA Inc.
952
In Stock
1 : £1.33000
Cut Tape (CT)
1,500 : £0.39179
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
180A (Tc)
4.5V, 10V
2.1mOhm @ 25A, 10V
2.05V @ 1mA
87 nC @ 10 V
±20V
6416 pF @ 20 V
Schottky Diode (Body)
166W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
IRFB4127PBFXKMA1
MOSFET N-CH 40V 180A TO220AB
Infineon Technologies
974
In Stock
1 : £1.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
180A (Tc)
10V
3.7mOhm @ 75A, 10V
4V @ 250µA
150 nC @ 10 V
±20V
4340 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
PG-TO263-3
MOSFET N-CH 40V 180A D2PAK
Infineon Technologies
4,249
In Stock
1 : £1.94000
Cut Tape (CT)
800 : £0.65018
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
180A (Tc)
10V
3.7mOhm @ 75A, 10V
4V @ 150µA
150 nC @ 10 V
±20V
4340 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 100V 180A D2PAK
Infineon Technologies
741
In Stock
1 : £2.77000
Cut Tape (CT)
800 : £0.98258
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
4.5V, 10V
4.3mOhm @ 110A, 10V
2.5V @ 250µA
130 nC @ 4.5 V
±16V
11360 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-7-3
MOSFET P-CH 40V 180A TO263-7
Infineon Technologies
1,652
In Stock
1 : £3.05000
Cut Tape (CT)
1,000 : £1.07634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
180A (Tc)
-
2.8mOhm @ 100A, 10V
4V @ 410µA
250 nC @ 10 V
±20V
17640 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
530
In Stock
1 : £3.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
4.5mOhm @ 75A, 10V
4V @ 250µA
210 nC @ 10 V
±20V
9620 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
PG-TO263-7
MOSFET N-CH 60V 180A TO263-7
Infineon Technologies
1,520
In Stock
1 : £3.45000
Cut Tape (CT)
1,000 : £1.24299
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
180A (Tc)
10V
1.7mOhm @ 100A, 10V
4V @ 200µA
270 nC @ 10 V
±20V
21900 pF @ 25 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
PG-TO263-7-3
MOSFET N-CH 40V 180A TO263-7
Infineon Technologies
2,075
In Stock
1 : £3.50000
Cut Tape (CT)
1,000 : £1.26296
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
180A (Tc)
10V
0.98mOhm @ 100A, 10V
4V @ 230µA
286 nC @ 10 V
±20V
22880 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
TO-220-3
MOSFET N-CH 100V 180A TO220
STMicroelectronics
659
In Stock
1 : £3.78000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.7mOhm @ 60A, 10V
4.5V @ 250µA
180 nC @ 10 V
±20V
12800 pF @ 25 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-220
TO-220-3
H2PAK
MOSFET N-CH 100V 180A H2PAK-2
STMicroelectronics
967
In Stock
1 : £3.88000
Cut Tape (CT)
1,000 : £1.38829
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.3mOhm @ 60A, 10V
4.5V @ 250µA
180 nC @ 10 V
±20V
12800 pF @ 25 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
H2PAK
MOSFET N-CH 100V 180A H2PAK-2
STMicroelectronics
5,450
In Stock
1 : £4.61000
Cut Tape (CT)
1,000 : £1.81067
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.5mOhm @ 60A, 10V
3.8V @ 250µA
180 nC @ 10 V
±20V
12800 pF @ 25 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-7-3
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
798
In Stock
1 : £4.63000
Cut Tape (CT)
1,000 : £1.82151
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.5mOhm @ 100A, 10V
3.5V @ 275µA
200 nC @ 10 V
±20V
14600 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
H2PAK
MOSFET N-CH 80V 180A H2PAK-2
STMicroelectronics
491
In Stock
1 : £4.73000
Cut Tape (CT)
1,000 : £1.87255
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
180A (Tc)
10V
2.1mOhm @ 90A, 10V
4.5V @ 250µA
193 nC @ 10 V
±20V
13600 pF @ 50 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-7
MOSFET N-CH 100V 180A H2PAK-6
STMicroelectronics
902
In Stock
1 : £4.87000
Cut Tape (CT)
1,000 : £1.95136
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
2.5mOhm @ 60A, 10V
3.8V @ 250µA
180 nC @ 10 V
±20V
12800 pF @ 25 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
H2PAK-6
TO-263-7, D2PAK (6 Leads + Tab)
PG-TO263-7
MOSFET N-CH 120V 180A TO263-7
Infineon Technologies
929
In Stock
1 : £4.97000
Cut Tape (CT)
1,000 : £2.00690
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
180A (Tc)
10V
3.6mOhm @ 100A, 10V
4V @ 270µA
211 nC @ 10 V
±20V
13800 pF @ 60 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
PG-TO263-7
MOSFET N-CH 80V 180A TO263-7
Infineon Technologies
2,662
In Stock
1 : £5.42000
Cut Tape (CT)
1,000 : £2.24811
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
180A (Tc)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 279µA
222 nC @ 10 V
±20V
16900 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
TO-220-3
MOSFET N-CH 100V 180A TO220AB
IXYS
185
In Stock
1 : £5.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
6.4mOhm @ 25A, 10V
4.5V @ 250µA
151 nC @ 10 V
±30V
6900 pF @ 25 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
IXYX110N120A4
MOSFET N-CH 200V 180A TO247
IXYS
347
In Stock
1 : £13.42000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
180A (Tc)
10V
7.5mOhm @ 90A, 10V
4.5V @ 4mA
154 nC @ 10 V
±20V
10300 pF @ 25 V
-
780W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
Showing
of 185

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.