170A (Tc) Single FETs, MOSFETs

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of 67

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRFS3207TRLPBF MOSFET N-CH 75V 170A D2PAK Infineon Technologies	3,802 In Stock	1 : £3.16000 Cut Tape (CT) 800 : £1.14726 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	75 V	170A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	7600 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTK170P10P MOSFET P-CH 100V 170A TO264 IXYS	146 In Stock	1 : £16.91000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	12mOhm @ 500mA, 10V	4V @ 1mA	240 nC @ 10 V	±20V	12600 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
NTTFS4C02NTAG MOSFET N-CH 30V 170A 8WDFN onsemi	416 In Stock	1 : £0.76000 Cut Tape (CT) 1,500 : £0.20610 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	170A (Tc)	4.5V, 10V	2.25mOhm @ 20A, 10V	2.2V @ 250µA	20 nC @ 4.5 V	±20V	2980 pF @ 15 V	-	91W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SQJ110EP-T1_GE3 AUTOMOTIVE N-CHANNEL 100 V (D-S) Vishay Siliconix	1,885 In Stock	1 : £1.84000 Cut Tape (CT) 3,000 : £0.53100 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	6.3mOhm @ 15A, 10V	3.5V @ 250µA	113 nC @ 10 V	±20V	6100 pF @ 25 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRFB3207PBF MOSFET N-CH 75V 170A TO220AB Infineon Technologies	1,277 In Stock	1 : £2.79000 Tube	HEXFET®	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	75 V	170A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	7600 pF @ 50 V	-	330W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IPB016N08NF2SATMA1 TRENCH 40<-<100V PG-TO263-3 Infineon Technologies	1,221 In Stock	1 : £4.26000 Cut Tape (CT) 800 : £1.45414 Tape & Reel (TR)	StrongIRFET™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	170A (Tc)	6V, 10V	1.65mOhm @ 100A, 10V	3.8V @ 267µA	255 nC @ 10 V	±20V	12000 pF @ 40 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH170N10P MOSFET N-CH 100V 170A TO247AD IXYS	159 In Stock 480 Factory	1 : £10.46000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	9mOhm @ 500mA, 10V	5V @ 4mA	198 nC @ 10 V	±20V	6000 pF @ 25 V	-	715W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT170N25X3HV MOSFET N-CH 250V 170A TO268HV IXYS	132 In Stock	1 : £16.41000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	170A (Tc)	10V	7.4mOhm @ 85A, 10V	4.5V @ 4mA	190 nC @ 10 V	±20V	13500 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTN170P10P MOSFET P-CH 100V 170A SOT227B IXYS	595 In Stock	1 : £27.34000 Tube	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	12mOhm @ 500mA, 10V	4V @ 1mA	240 nC @ 10 V	±20V	12600 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN170N25X3 MOSFET N-CH 250V 170A SOT227B IXYS	394 In Stock	1 : £26.15000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	170A (Tc)	10V	7.4mOhm @ 85A, 10V	4.5V @ 4mA	190 nC @ 10 V	±20V	13500 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
DMTH32M5LPSQ-13 MOSFET N-CH 30V 170A PWRDI5060-8 Diodes Incorporated	1,271 In Stock	1 : £1.34000 Cut Tape (CT) 2,500 : £0.35988 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	170A (Tc)	4.5V, 10V	2.2mOhm @ 30A, 10V	3V @ 1mA	68 nC @ 10 V	±16V	3944 pF @ 25 V	-	3.2W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerDI5060-8	8-PowerTDFN
IXTP170N075T2 MOSFET N-CH 75V 170A TO220AB IXYS	326 In Stock	1 : £3.73000 Tube	TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	170A (Tc)	10V	5.4mOhm @ 50A, 10V	4V @ 250µA	109 nC @ 10 V	±20V	6860 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
SQJ140ER-T1_GE3 N-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix	3,000 In Stock	1 : £1.38000 Cut Tape (CT) 3,000 : £0.37916 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	170A (Tc)	10V	2.05mOhm @ 15A, 10V	3.5V @ 250µA	74 nC @ 10 V	±20V	4678 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-10LR	10-LSOP (0.209", 5.30mm Width)
IMBG65R009M1HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	992 In Stock	1 : £20.83000 Cut Tape (CT) 1,000 : £12.86369 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	170A (Tc)	18V	13.6mOhm @ 97.2A, 18V	5.7V @ 32.4mA	176 nC @ 18 V	+23V, -5V	6054 pF @ 400 V	-	555W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GSGP2R608 MOSFET, N-CH, SINGLE, 170.00A, 8 Good-Ark Semiconductor	9,986 In Stock	1 : £1.72000 Cut Tape (CT) 5,000 : £0.47679 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	170A (Tc)	10V	2.6mOhm @ 50A, 10V	3.9V @ 250µA	95 nC @ 10 V	±20V	6022 pF @ 40 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PPAK (5.1x5.86)	8-PowerTDFN
GT025N06D5 N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Goford Semiconductor	6,126 In Stock	1 : £1.96000 Cut Tape (CT) 5,000 : £0.57027 Tape & Reel (TR)	SGT	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	2.5V @ 250µA	81 nC @ 10 V	±20V	5125 pF @ 30 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
GT025N06AD5 N60V, 170A, RD<2.2M@10V,VTH1.2V~ Goford Semiconductor	3,117 In Stock	1 : £2.00000 Cut Tape (CT) 5,000 : £0.58523 Tape & Reel (TR)	SGT	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	2.5V @ 250µA	81 nC @ 10 V	±20V	5044 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
GT025N06M MOSFET,N-CH,60V,170A,215W,TO-263 Goford Semiconductor	180 In Stock	1 : £2.09000 Cut Tape (CT) 800 : £0.70943 Tape & Reel (TR)	SGT	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	10V, 4.5V	2.5mOhm @ 50A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	5300 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT025N06AM N60V,170A,RD<2.5M@10V,VTH1.2V~2. Goford Semiconductor	776 In Stock	1 : £2.23000 Cut Tape (CT) 800 : £0.76511 Tape & Reel (TR)	SGT	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	5119 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT025N06AM6 N60V,170A,RD<2.0M@10V,VTH1.2V~2. Goford Semiconductor	494 In Stock	1 : £2.38000 Cut Tape (CT) 800 : £0.82290 Tape & Reel (TR)	-	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2mOhm @ 20A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	5058 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-6	TO-263-7, D2PAK (6 Leads + Tab)
FQA170N06 MOSFET N-CH 60V 170A TO3PN onsemi	0 In Stock 250 Marketplace	58 : £3.88155 Bulk	QFET®	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	10V	5.6mOhm @ 85A, 10V	4V @ 250µA	290 nC @ 10 V	±25V	9350 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IXFN170N65X2 MOSFET N-CH 650V 170A SOT227B IXYS	175 In Stock	1 : £43.02000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	170A (Tc)	10V	13mOhm @ 85A, 10V	5V @ 8mA	434 nC @ 10 V	±30V	27000 pF @ 25 V	-	1170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
GT025N06AD5 MOSFET N-CH 60V 170A DFN5*6-8L Goford Semiconductor	10,000 Marketplace	5,000 : £0.51680 Tape & Reel (TR)	SGT	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	170A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	2.5V @ 250µA	-	±20V	5044 pF @ 30 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
GT025N06AT MOSFET N-CH 60V 170A TO-220 Goford Semiconductor	10,000 Marketplace	2,000 : £0.57663 Tube	SGT	Tube	Active	N-Channel	MOSFET (Metal Oxide)	-	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	2.5V @ 250µA	-	±20V	-	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
GT030N08D5 MOSFET,N-CH,80V,155A,140W,DFN5*6 Goford Semiconductor	100 In Stock	1 : £1.80000 Cut Tape (CT) 5,000 : £0.50857 Tape & Reel (TR)	SGT	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	170A (Tc)	10V, 4.5V	3mOhm @ 20A, 10V	3V @ 250µA	75 nC @ 10 V	±20V	5100 pF @ 40 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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