17.6A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMN3008SFG-7 MOSFET N-CH 30V 17.6A PWRDI3333 Diodes Incorporated	5,783 In Stock 12,000 Factory	1 : £0.72000 Cut Tape (CT) 2,000 : £0.18005 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	17.6A (Ta)	4.5V, 10V	4.6mOhm @ 13.5A, 10V	2.3V @ 250µA	86 nC @ 10 V	±20V	3690 pF @ 10 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
DMN3008SFG-13 MOSFET N-CH 30V 17.6A PWRDI3333 Diodes Incorporated	0 In Stock 33,000 Factory Check Lead Time	3,000 : £0.19868 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	17.6A (Ta)	4.5V, 10V	4.6mOhm @ 13.5A, 10V	2.3V @ 250µA	86 nC @ 10 V	±20V	3690 pF @ 10 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
IRF7809TR MOSFET N-CH 30V 17.6A 8SO Infineon Technologies	0 In Stock	4,000 : £1.25255 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	17.6A (Ta)	4.5V	7.5mOhm @ 15A, 4.5V	1V @ 250µA	86 nC @ 5 V	±12V	7300 pF @ 16 V	-	3.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7809 MOSFET N-CH 30V 17.6A 8SO Infineon Technologies	0 In Stock	95 : £1.66358 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	17.6A (Ta)	4.5V	7.5mOhm @ 15A, 4.5V	1V @ 250µA	86 nC @ 5 V	±12V	7300 pF @ 16 V	-	3.5W (Ta)	-	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.