150A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
2,553
In Stock
1 : £1.53000
Cut Tape (CT)
5,000 : £0.40742
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
6V, 10V
1.2mOhm @ 50A, 10V
3V @ 500µA
62 nC @ 10 V
±20V
5855 pF @ 20 V
-
960mW (Ta), 132W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
111
In Stock
1 : £1.53000
Cut Tape (CT)
5,000 : £0.40742
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
1.24mOhm @ 50A, 10V
2.4V @ 500µA
74 nC @ 10 V
±20V
7200 pF @ 20 V
-
960mW (Ta), 132W (Tc)
175°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
169
In Stock
1 : £1.61000
Cut Tape (CT)
5,000 : £0.43757
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
1.24mOhm @ 50A, 10V
2.4V @ 500µA
74 nC @ 10 V
±20V
7200 pF @ 20 V
-
960mW (Ta), 170W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
20,688
In Stock
1 : £1.96000
Cut Tape (CT)
5,000 : £0.57276
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
0.85mOhm @ 50A, 10V
2.4V @ 1mA
103 nC @ 10 V
±20V
9600 pF @ 20 V
-
1W (Ta), 170W (Tc)
175°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
IAUCN04S7L014ATMA1
MOSFET N-CH 40V 150A TDSON-8-34
Infineon Technologies
3,717
In Stock
1 : £1.96000
Cut Tape (CT)
5,000 : £0.57423
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
960mOhm @ 60A, 10V
2V @ 90µA
128 nC @ 10 V
±16V
7806 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
2,447
In Stock
1 : £2.05000
Cut Tape (CT)
5,000 : £0.60839
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
0.65mOhm @ 50A, 10V
2.1V @ 1mA
110 nC @ 10 V
±20V
10000 pF @ 15 V
-
960mW (Ta), 170W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
10,418
In Stock
1 : £2.14000
Cut Tape (CT)
5,000 : £0.64859
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
0.65mOhm @ 50A, 10V
2.1V @ 1mA
110 nC @ 10 V
±20V
10000 pF @ 15 V
-
960mW (Ta), 210W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
6,199
In Stock
1 : £2.89000
Cut Tape (CT)
5,000 : £0.97470
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
0.8mOhm @ 50A, 10V
2.4V @ 1mA
103 nC @ 10 V
±20V
9600 pF @ 20 V
-
1W (Ta), 170W (Tc)
175°C (TJ)
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
SQM120P04-04L_GE3
MOSFET N-CH 80V 150A TO263
Vishay Siliconix
1,392
In Stock
1 : £2.99000
Cut Tape (CT)
800 : £1.07895
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
7.5V, 10V
2.1mOhm @ 30A, 10V
4V @ 250µA
227 nC @ 10 V
±20V
10680 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQM120P04-04L_GE3
MOSFET N-CH 100V 150A TO263
Vishay Siliconix
4,246
In Stock
1 : £3.38000
Cut Tape (CT)
800 : £1.24698
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
150A (Tc)
7.5V, 10V
2.88mOhm @ 30A, 10V
4V @ 250µA
214 nC @ 10 V
±20V
10870 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHP23N60E-GE3
P-CHANNEL 80 V (D-S) MOSFET TO-2
Vishay Siliconix
1,772
In Stock
1 : £3.49000
Bulk
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
4.5V, 10V
5.8mOhm @ 20A, 10V
2.5V @ 250µA
218 nC @ 10 V
±20V
9600 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
SQM120P04-04L_GE3
P-CHANNEL 80 V (D-S) MOSFET D2PA
Vishay Siliconix
9,861
In Stock
1 : £4.84000
Cut Tape (CT)
800 : £1.94713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
4.5V, 10V
6.1mOhm @ 20A, 10V
2.5V @ 250µA
218 nC @ 10 V
±20V
9600 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXYX110N120A4
MOSFET N-CH 300V 150A TO247
IXYS
855
In Stock
1 : £15.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
177 nC @ 10 V
±20V
13100 pF @ 25 V
-
890W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-264
MOSFET N-CH 300V 150A TO264
IXYS
175
In Stock
700
Factory
1 : £15.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
177 nC @ 10 V
±20V
13100 pF @ 25 V
-
890W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264
TO-264-3, TO-264AA
TO-268HV
MOSFET N-CH 300V 150A TO268HV
IXYS
804
In Stock
1 : £16.52000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
254 nC @ 10 V
±20V
13100 pF @ 25 V
-
890W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268HV (IXFT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
DMTH8008LPSQ-13
MOSFET P-CH 20V 150A PWRDI5060-8
Diodes Incorporated
1,110
In Stock
17,500
Factory
1 : £1.38000
Cut Tape (CT)
2,500 : £0.37413
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
150A (Tc)
2.5V, 10V
2.2mOhm @ 25A, 10V
1.4V @ 250µA
177 nC @ 10 V
±12V
8352 pF @ 10 V
-
1.4W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
SQM120P04-04L_GE3
MOSFET N-CH 40V 150A TO263
Vishay Siliconix
1,085
In Stock
1 : £2.51000
Cut Tape (CT)
800 : £0.88020
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
1.67mOhm @ 30A, 10V
2.5V @ 250µA
195 nC @ 10 V
±20V
10930 pF @ 20 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT-1023
NEXTPOWER 80 V, 3.5 MOHM, 150 A,
Nexperia USA Inc.
2,413
In Stock
1 : £2.79000
Cut Tape (CT)
1,500 : £0.93603
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
7V, 10V
3.5mOhm @ 25A, 10V
4V @ 1mA
108 nC @ 10 V
±20V
7227 pF @ 40 V
-
294W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SOT-1023, 4-LFPAK
2,773
In Stock
1 : £2.80000
Cut Tape (CT)
2,000 : £0.93196
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
150A (Tc)
6V, 10V
3.5mOhm @ 75A, 10V
3.8V @ 110µA
87 nC @ 10 V
±20V
6110 pF @ 50 V
-
166W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOF-8-1
8-PowerSFN
PowerPAK 8x8
MOSFET N-CH 80V 150A PPAK 8 X 8
Vishay Siliconix
2,854
In Stock
1 : £2.93000
Cut Tape (CT)
2,000 : £0.99480
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
10V
3mOhm @ 20A, 10V
3.5V @ 250µA
144 nC @ 10 V
±20V
8625 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
9,673
In Stock
1 : £2.95000
Cut Tape (CT)
5,000 : £1.00485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
0.6mOhm @ 50A, 10V
2.1V @ 1mA
110 nC @ 10 V
±20V
10000 pF @ 15 V
-
960mW (Ta), 170W (Tc)
175°C
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
SIHP23N60E-GE3
MOSFET N-CH 80V 150A TO220AB
Vishay Siliconix
390
In Stock
1 : £2.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
7.5V, 10V
2.4mOhm @ 30A, 10V
4V @ 250µA
227 nC @ 10 V
±20V
10680 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
SIHP23N60E-GE3
N-CHANNEL 200 V (D-S) MOSFET TO-
Vishay Siliconix
645
In Stock
1 : £3.35000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
200 V
150A (Tc)
7.5V, 10V
10.9mOhm @ 16A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
3930 pF @ 100 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
SQM120P04-04L_GE3
MOSFET N-CH 60V 150A TO263
Vishay Siliconix
764
In Stock
1 : £3.38000
Strip
Strip
Active
N-Channel
MOSFET (Metal Oxide)
60 V
150A (Tc)
7.5V, 10V
1.75mOhm @ 30A, 10V
4V @ 250µA
212 nC @ 10 V
±20V
10895 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQM120P04-04L_GE3
N-CHANNEL 200-V (D-S) MOSFET D2P
Vishay Siliconix
1,058
In Stock
1 : £3.61000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
200 V
150A (Tc)
7.5V, 10V
11.4mOhm @ 16A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
3930 pF @ 100 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 121

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.