12.5A (Ta) Single FETs, MOSFETs

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of 32

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
FDS6680A MOSFET N-CH 30V 12.5A 8SOIC onsemi	5,731 In Stock	1 : £1.08000 Cut Tape (CT) 2,500 : £0.28750 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9.5mOhm @ 12.5A, 10V	3V @ 250µA	23 nC @ 5 V	±20V	1620 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI7106DN-T1-E3 MOSFET N-CH 20V 12.5A PPAK1212-8 Vishay Siliconix	17,807 In Stock	1 : £2.09000 Cut Tape (CT) 3,000 : £0.62151 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	2.5V, 4.5V	6.2mOhm @ 19.5A, 4.5V	1.5V @ 250µA	27 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SISH106DN-T1-GE3 MOSFET N-CH 20V 12.5A PPAK Vishay Siliconix	4,783 In Stock	1 : £1.67463 Cut Tape (CT) 3,000 : £0.47550 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	2.5V, 4.5V	6.2mOhm @ 19.5A, 4.5V	1.5V @ 250µA	27 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
SI7106DN-T1-GE3 MOSFET N-CH 20V 12.5A PPAK1212-8 Vishay Siliconix	2,839 In Stock	1 : £2.15000 Cut Tape (CT) 3,000 : £0.64934 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	2.5V, 4.5V	6.2mOhm @ 19.5A, 4.5V	1.5V @ 250µA	27 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SI4822DY SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor	7,709 Marketplace	478 : £0.46753 Bulk	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9.5mOhm @ 12.5A, 10V	3V @ 250µA	33 nC @ 5 V	±20V	2180 pF @ 15 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PMPB07R3VPX PMPB07R3VP - 12 V, P-CHANNEL TRE Nexperia USA Inc.	1,908 In Stock	1 : £0.64000 Cut Tape (CT)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	12 V	12.5A (Ta)	1.8V, 4.5V	8.6mOhm @ 12.5A, 4.5V	900mV @ 250µA	40 nC @ 4.5 V	±8V	2121 pF @ 6 V	-	1.9W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020M-6	6-UDFN Exposed Pad
FDC796N MOSFET N-CH 30V 12.5A SUPERSOT6 Fairchild Semiconductor	983,985 Marketplace	319 : £0.69759 Bulk	PowerTrench®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	3V @ 250µA	20 nC @ 5 V	±20V	1444 pF @ 15 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SuperSOT™-6 FLMP	6-SSOT Flat-lead, SuperSOT™-6 FLMP
FDS4470 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	107,554 Marketplace	224 : £0.99442 Bulk	PowerTrench®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	12.5A (Ta)	10V	9mOhm @ 12.5A, 10V	5V @ 250µA	63 nC @ 10 V	+30V, -20V	2659 pF @ 20 V	-	2.5W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDZ208P MOSFET P-CH 30V 12.5A 30BGA Fairchild Semiconductor	5,403 Marketplace	180 : £1.23189 Bulk	PowerTrench®	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	10.5mOhm @ 12.5A, 10V	3V @ 250µA	35 nC @ 5 V	±25V	2409 pF @ 15 V	-	2.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	30-BGA (4x3.5)	30-WFBGA
FDS6672A MOSFET N-CH 30V 12.5A 8SOIC Fairchild Semiconductor	259,334 Marketplace	159 : £1.40258 Bulk	PowerTrench®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	8mOhm @ 14A, 10V	2V @ 250µA	46 nC @ 4.5 V	±12V	5070 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDS8876-F40 30V N-CHANNEL POWERTRENCH MOSFET onsemi	27,500 Marketplace	Unavailable Unavailable in your selected currency	PowerTrench®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	8.2mOhm @ 12.5A, 10V	2.5V @ 250µA	36 nC @ 10 V	±20V	1650 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDS8876 MOSFET N-CH 30V 12.5A 8SOIC Fairchild Semiconductor	1,611 Marketplace	412 : £0.54172 Bulk	PowerTrench®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	8.2mOhm @ 12.5A, 10V	2.5V @ 250µA	36 nC @ 10 V	±20V	1650 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TK13A50DA(STA4,Q,M MOSFET N-CH 500V 12.5A TO220SIS Toshiba Semiconductor and Storage	11 In Stock	1 : £2.46000 Tube	π-MOSVII	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	12.5A (Ta)	10V	470mOhm @ 6.3A, 10V	4V @ 1mA	28 nC @ 10 V	±30V	1550 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK13A55DA(STA4,QM) MOSFET N-CH 550V 12.5A TO220SIS Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : £2.77000 Tube	π-MOSVII	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	12.5A (Ta)	10V	480mOhm @ 6.3A, 10V	4V @ 1mA	38 nC @ 10 V	±30V	1800 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
AOD421 MOSFET P-CH 20V 12.5A TO252 Alpha & Omega Semiconductor Inc.	0 In Stock	2,500 : £0.11928 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	2.5V, 4.5V	75mOhm @ 12.5A, 10V	1.4V @ 250µA	4.6 nC @ 4.5 V	±12V	620 pF @ 10 V	-	2W (Ta), 18.8W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AO4427 MOSFET P-CH 30V 12.5A 8SOIC Alpha & Omega Semiconductor Inc.	0 In Stock	3,000 : £0.20762 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	12mOhm @ 12.5A, 20V	3V @ 250µA	52 nC @ 10 V	±25V	2900 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4420DY MOSFET N-CH 30V 12.5A 8SOIC onsemi	0 In Stock	2,500 : £0.28623 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	1V @ 250µA	53 nC @ 5 V	±20V	2180 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDC796N MOSFET N-CH 30V 12.5A SUPERSOT6 onsemi	0 In Stock	3,000 : £0.35220 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	3V @ 250µA	20 nC @ 5 V	±20V	1444 pF @ 15 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SuperSOT™-6 FLMP	6-SSOT Flat-lead, SuperSOT™-6 FLMP
RXH125N03TB1 MOSFET N-CH 30V 12.5A 8SOP Rohm Semiconductor	0 In Stock Check Lead Time	2,500 : £0.38535 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4V, 10V	12mOhm @ 12.5A, 10V	2.5V @ 1mA	12.7 nC @ 5 V	±20V	1000 pF @ 10 V	-	2W (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SI4420DYTR MOSFET N-CH 30V 12.5A 8SO Infineon Technologies	0 In Stock	4,000 : £1.47307 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	1V @ 250µA	78 nC @ 10 V	±20V	2240 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RSH125N03TB1 MOSFET N-CH 30V 12.5A 8SOP Rohm Semiconductor	0 In Stock	1 : £1.71000 Cut Tape (CT) 2,500 : £0.49528 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4V, 10V	9.1mOhm @ 12.5A, 10V	2.5V @ 1mA	28 nC @ 5 V	±20V	1670 pF @ 10 V	-	2W (Ta)	-	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SI4420DY MOSFET N-CH 30V 12.5A 8SO Infineon Technologies	0 In Stock	95 : £1.88863 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	1V @ 250µA	78 nC @ 10 V	±20V	2240 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RSS125N03TB MOSFET N-CH 30V 12.5A 8SOP Rohm Semiconductor	0 In Stock	Active	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4V, 10V	8.9mOhm @ 12.5A, 10V	2.5V @ 1mA	28 nC @ 5 V	20V	1670 pF @ 10 V	-	2W (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SI4420DYPBF MOSFET N-CH 30V 12.5A 8SO Infineon Technologies	0 In Stock	Discontinued at Digi-Key	HEXFET®	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	1V @ 250µA	78 nC @ 10 V	±20V	2240 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4420DYTRPBF MOSFET N-CH 30V 12.5A 8SO Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	1V @ 250µA	78 nC @ 10 V	±20V	2240 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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