11.1A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SI9407BDY-T1-GE3
SI4056DY-T1-GE3
MOSFET N-CH 100V 11.1A 8SO
Vishay Siliconix
10,786
In Stock
1 : £0.77000
Cut Tape (CT)
2,500 : £0.23085
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
11.1A (Tc)
4.5V, 10V
23mOhm @ 15A, 10V
2.8V @ 250µA
29.5 nC @ 10 V
±20V
900 pF @ 50 V
-
2.5W (Ta), 5.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PG-TO220-FP
IPAN50R500CEXKSA1
MOSFET N-CH 500V 11.1A TO220
Infineon Technologies
406
In Stock
1 : £1.12000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
11.1A (Tc)
13V
500mOhm @ 2.3A, 13V
3.5V @ 200µA
18.7 nC @ 10 V
±20V
433 pF @ 100 V
-
28W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-VSON-4
IPL60R299CPAUMA1
MOSFET N-CH 600V 11.1A 4VSON
Infineon Technologies
0
In Stock
91,329
Marketplace
1 : £2.97000
Cut Tape (CT)
3,000 : £1.04833
Tape & Reel (TR)
198 : £1.14667
Bulk
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
11.1A (Tc)
10V
299mOhm @ 6.6A, 10V
3.5V @ 440µA
22 nC @ 10 V
±20V
1100 pF @ 100 V
-
96W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
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11.1A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.