10A (Ta), 64A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
NVMFS5113PLT1G MOSFET P-CH 60V 10A/64A 5DFN onsemi	2,535 In Stock	1 : £2.22000 Cut Tape (CT) 1,500 : £0.86381 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	10A (Ta), 64A (Tc)	4.5V, 10V	14mOhm @ 17A, 10V	2.5V @ 250µA	83 nC @ 10 V	±20V	4400 pF @ 25 V	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS5113PLT1G NFET SO8FL 60V 69A 16MOHM onsemi	1,946 In Stock	1 : £2.08000 Cut Tape (CT) 1,500 : £0.71128 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	10A (Ta), 64A (Tc)	4.5V, 10V	14mOhm @ 17A, 10V	2.5V @ 250µA	83 nC @ 10 V	±20V	4400 pF @ 25 V	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5113PLWFT1G MOSFET P-CH 60V 10A/64A 5DFN onsemi	2,673 In Stock	1 : £2.61000 Cut Tape (CT) 1,500 : £0.92725 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	10A (Ta), 64A (Tc)	4.5V, 10V	14mOhm @ 17A, 10V	2.5V @ 250µA	83 nC @ 10 V	±20V	4400 pF @ 25 V	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads

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10A (Ta), 64A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.