1.2A (Ta) Single FETs, MOSFETs

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of 59

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
NTS4173PT1G MOSFET P-CH 30V 1.2A SC70-3 onsemi	5,896 In Stock	1 : £0.30000 Cut Tape (CT) 3,000 : £0.06052 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	2.5V, 10V	150mOhm @ 1.2A, 10V	1.5V @ 250µA	10.1 nC @ 10 V	±12V	430 pF @ 15 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	17,553 In Stock	1 : £0.31000 Cut Tape (CT) 3,000 : £0.06747 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	1V @ 250µA	5 nC @ 10 V	±20V	85 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
ZXMN6A07FTA MOSFET N-CH 60V 1.2A SOT23-3 Diodes Incorporated	18,357 In Stock	1 : £0.59000 Cut Tape (CT) 3,000 : £0.13701 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 1.8A, 10V	3V @ 250µA	3.2 nC @ 10 V	±20V	166 pF @ 40 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN2310UTQ-7 MOSFET BVDSS: 8V~24V SOT523 T&R Diodes Incorporated	2,808 In Stock 39,000 Factory	1 : £0.27000 Cut Tape (CT) 3,000 : £0.05874 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	240mOhm @ 300mA, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	±8V	38 pF @ 10 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-523	SOT-523
BSP296NH6327XTSA1 MOSFET N-CH 100V 1.2A SOT223-4 Infineon Technologies	3,350 In Stock	1 : £0.79000 Cut Tape (CT) 1,000 : £0.22457 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.2A (Ta)	4.5V, 10V	600mOhm @ 1.2A, 10V	1.8V @ 100µA	6.7 nC @ 10 V	±20V	152.7 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP296NH6433XTMA1 MOSFET N-CH 100V 1.2A SOT223-4 Infineon Technologies	11,772 In Stock	1 : £0.86000 Cut Tape (CT) 4,000 : £0.20603 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.2A (Ta)	4.5V, 10V	600mOhm @ 1.2A, 10V	1.8V @ 100µA	6.7 nC @ 10 V	±20V	152.7 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
PJA3436_R1_00001 SOT-23, MOSFET Panjit International Inc.	8,425 In Stock	1 : £0.19000 Cut Tape (CT) 3,000 : £0.04001 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	380mOhm @ 1.2A, 4.5V	1V @ 250µA	0.9 nC @ 4.5 V	±12V	39 pF @ 10 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
PMXB350UPEZ NEXPERIA PMXB350UPE - 20 V, P-CH NXP Semiconductors	509,235 Marketplace	1,485 : £0.14820 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.2V, 4.5V	447mOhm @ 1.2A, 4.5V	950mV @ 250µA	2.3 nC @ 4.5 V	±8V	116 pF @ 10 V	-	360mW (Ta), 5.68W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
FDG312P MOSFET P-CH 20V 1.2A SC88 Fairchild Semiconductor	77,866 Marketplace	1,178 : £0.18525 Bulk	PowerTrench®	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	2.5V, 4.5V	180mOhm @ 1.2A, 4.5V	1.5V @ 250µA	5 nC @ 4.5 V	±8V	330 pF @ 10 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-88 (SC-70-6)	6-TSSOP, SC-88, SOT-363
NTLUF4189NZTBG MOSFET N-CH 30V 1.2A 6UDFN onsemi	0 In Stock 302,750 Marketplace	3,000 : £0.17199 Tape & Reel (TR) 956 : £0.22971 Bulk	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	2.5V, 4.5V	200mOhm @ 1.5A, 4.5V	1.5V @ 250µA	3 nC @ 4.5 V	±8V	95 pF @ 15 V	Schottky Diode (Isolated)	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-UDFN (1.6x1.6)	6-UFDFN Exposed Pad
UMWIRLML2060TR MOSFET N-CH 60V 1.2A SOT23 UMW	1,760 In Stock	1 : £0.35000 Cut Tape (CT) 3,000 : £0.07501 Tape & Reel (TR)	*	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.2A (Ta)	4.5V, 10V	480mOhm @ 1.2A, 10V	2.5V @ 25µA	-	±16V	-	-	1.25W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AM3490N MOSFET N-CH 150V 1.2A TSOP-6 Analog Power Inc.	12,000 Marketplace	1 : £0.39000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	1.2A (Ta)	4.5V, 10V	700mOhm @ 1.1A, 10V	1V @ 250µA	3.5 nC @ 4.5 V	±20V	356 pF @ 15 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3440DV-T1-GE3 MOSFET N-CH 150V 1.2A 6TSOP Vishay Siliconix	415 In Stock	1 : £1.64000 Cut Tape (CT)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	1.2A (Ta)	6V, 10V	375mOhm @ 1.5A, 10V	4V @ 250µA	8 nC @ 10 V	±20V	-	-	1.14W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
PJA3436-AU_R1_000A1 SOT-23, MOSFET Panjit International Inc.	677 In Stock	1 : £0.19000 Cut Tape (CT) 3,000 : £0.03919 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	380mOhm @ 1.2A, 4.5V	1V @ 250µA	0.9 nC @ 4.5 V	±12V	39 pF @ 10 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRLML2060TRPBF MOSFET N-CH 60V 1.2A SOT23 Infineon Technologies	0 In Stock Check Lead Time	1 : £0.30000 Cut Tape (CT) 3,000 : £0.06574 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.2A (Ta)	4.5V, 10V	480mOhm @ 1.2A, 10V	2.5V @ 25µA	0.67 nC @ 4.5 V	±16V	64 pF @ 25 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
ZXMN6A07FQTA MOSFET N-CH 60V 1.2A SOT23 Diodes Incorporated	0 In Stock Check Lead Time	1 : £0.63000 Cut Tape (CT) 3,000 : £0.14830 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 1.8A, 10V	3V @ 250µA	3.2 nC @ 10 V	±20V	166 pF @ 40 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN3731UFB4-7B MOSFET N-CH 30V 1.2A 3DFN Diodes Incorporated	0 In Stock Check Lead Time	1 : £0.19000 Cut Tape (CT) 10,000 : £0.03300 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	1.8V, 4.5V	460mOhm @ 200mA, 4.5V	950mV @ 250µA	5.5 nC @ 4.5 V	±8V	73 pF @ 25 V	-	520mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X2-DFN1006-3	3-XFDFN
DMN2310UT-13 MOSFET BVDSS: 8V~24V SOT523 T&R Diodes Incorporated	0 In Stock Check Lead Time	10,000 : £0.04593 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	240mOhm @ 300mA, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	±8V	38 pF @ 10 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-523	SOT-523
DMN2310UTQ-13 MOSFET BVDSS: 8V~24V SOT523 T&R Diodes Incorporated	0 In Stock Check Lead Time	10,000 : £0.04614 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	240mOhm @ 300mA, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	±8V	38 pF @ 10 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-523	SOT-523
DMN2451UFDFW-13 MOSFET BVDSS: 25V~30V U-DFN2020- Diodes Incorporated	0 In Stock Check Lead Time	10,000 : £0.04889 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.5V, 4.5V	600mOhm @ 200mA, 4.5V	1V @ 250µA	0.7 nC @ 4.5 V	±12V	52 pF @ 16 V	-	870mW (Ta)	-55°C ~ 150°C	-	-	Surface Mount, Wettable Flank	U-DFN2020-6 (SWP) (Type UXG)	6-UDFN Exposed Pad
DMN2451UFDFWQ-13 MOSFET BVDSS: 25V~30V U-DFN2020- Diodes Incorporated	0 In Stock Check Lead Time	10,000 : £0.05220 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.5V, 4.5V	600mOhm @ 200mA, 4.5V	1V @ 250µA	0.7 nC @ 4.5 V	±12V	52 pF @ 16 V	-	870mW (Ta)	-55°C ~ 150°C	Automotive	AEC-Q101	Surface Mount, Wettable Flank	U-DFN2020-6 (SWP) (Type UXG)	6-UDFN Exposed Pad
DMN2310UT-7 MOSFET BVDSS: 8V~24V SOT523 T&R Diodes Incorporated	0 In Stock Check Lead Time	3,000 : £0.05302 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	240mOhm @ 300mA, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	±8V	38 pF @ 10 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-523	SOT-523
DMN2451UFDFW-7 MOSFET BVDSS: 25V~30V U-DFN2020- Diodes Incorporated	0 In Stock Check Lead Time	3,000 : £0.05807 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.5V, 4.5V	600mOhm @ 200mA, 4.5V	1V @ 250µA	0.7 nC @ 4.5 V	±12V	52 pF @ 16 V	-	870mW (Ta)	-55°C ~ 150°C	-	-	Surface Mount, Wettable Flank	U-DFN2020-6 (SWP) (Type UXG)	6-UDFN Exposed Pad
DMN2451UFDFWQ-7 MOSFET BVDSS: 25V~30V U-DFN2020- Diodes Incorporated	0 In Stock 15,000 Factory Check Lead Time	3,000 : £0.06183 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.5V, 4.5V	600mOhm @ 200mA, 4.5V	1V @ 250µA	0.7 nC @ 4.5 V	±12V	52 pF @ 16 V	-	870mW (Ta)	-55°C ~ 150°C	Automotive	AEC-Q101	Surface Mount, Wettable Flank	U-DFN2020-6 (SWP) (Type UXG)	6-UDFN Exposed Pad
DMN2112SN-7 MOSFET N-CH 20V 1.2A SC59-3 Diodes Incorporated	0 In Stock	3,000 : £0.07591 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.5V, 4.5V	100mOhm @ 500mA, 4.5V	1.2V @ 1mA	-	±8V	220 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-59-3	TO-236-3, SC-59, SOT-23-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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