FET, MOSFET Arrays

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
5,956
In Stock
1 : £1.35000
Cut Tape (CT)
5,000 : £0.35064
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
45A (Tj)
7mOhm @ 22A, 10V
3V @ 9µA
12nC @ 10V
701pF @ 25V
41W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
5,867
In Stock
1 : £1.98000
Cut Tape (CT)
5,000 : £0.54496
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
60A (Tj)
3.1mOhm @ 30A, 10V
3V @ 25µA
30nC @ 10V
1922pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
4,897
In Stock
1 : £1.52000
Cut Tape (CT)
5,000 : £0.40095
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
60A (Tj)
5mOhm @ 30A, 10V
3V @ 13µA
17nC @ 10V
1027pF @ 25V
52W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
ISG0613N04NM6HATMA1
ISG0613N04NM6HATMA1
MOSFET 2N-CH 40V 42A 10VITFN
Infineon Technologies
2,484
In Stock
1 : £3.32000
Cut Tape (CT)
3,000 : £1.16747
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
42A (Ta), 299A (Tc)
0.88mOhm @ 50A, 10V
2.8V @ 780µA
104nC @ 10V
6200pF @ 20V
3W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
10-PowerVDFN
PG-VITFN-10-1
4,922
In Stock
1 : £1.91000
Cut Tape (CT)
5,000 : £0.52207
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
Logic Level Gate
40V
60A (Tj)
3mOhm @ 30A, 10V
2V @ 25µA
35nC @ 10V
2128pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
10 Power-WHITFN-10-1
ISG0613N04NM6HSCATMA1
MOSFET 2N-CH 40V 42A 10WHITFN
Infineon Technologies
0
In Stock
Check Lead Time
1 : £3.72000
Cut Tape (CT)
3,000 : £1.25984
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
-
40V
42A (Ta), 299A (Tc)
0.88mOhm @ 50A, 10V
2.8V @ 780µA
104nC @ 10V
6200pF @ 20V
3W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
10-PowerWDFN
PG-WHITFN-10-1
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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.