Single Bipolar Transistors

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Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
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TO-226-3, TO-92-3 (TO-226AA)
TRANS NPN 45V 0.1A TO-92-3
onsemi
5,425
In Stock
370,000
Factory
1 : £0.20000
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-
Bulk
Active
NPN
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
500 mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-220-3
TRANS PNP 60V 10A TO-220
STMicroelectronics
398
In Stock
1 : £1.24000
Tube
-
Tube
Active
PNP
10 A
60 V
8V @ 3.3A, 10A
700µA
20 @ 4A, 4V
75 W
2MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.