RF

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BFR360FH6327XTSA1 RF TRANS NPN 9V 14GHZ TSFP-3 Infineon Technologies	47,723 In Stock	1 : £0.18000 Cut Tape (CT) 3,000 : £0.06354 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	9V	14GHz	1dB @ 1.8GHz	15.5dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
MMBTH10-4LT1G RF TRANS NPN 25V 800MHZ SOT23-3 onsemi	40,865 In Stock	1 : £0.13000 Cut Tape (CT) 3,000 : £0.02610 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	25V	800MHz	-	-	225mW	120 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)

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RF

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.