Bipolar RF Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF422 RF TRANS NPN 35V 211-11 MACOM Technology Solutions	242 In Stock 580 Factory	1 : £101.10000 Tray	-	Tray	Active	NPN	35V	-	-	13dB	150W	15 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
2N5770 PBFREE RF TRANS NPN 15V 900MHZ TO92 Central Semiconductor Corp	41,743 In Stock	1 : £0.38000 Bulk	-	Bulk	Active	NPN	15V	900MHz	6dB @ 60MHz	-	625mW	50 @ 8mA, 1V	50mA	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFS481H6327XTSA1 RF TRANS 2 NPN 12V 8GHZ SOT363-6 Infineon Technologies	12,804 In Stock	1 : £0.49000 Cut Tape (CT) 3,000 : £0.22023 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	2 NPN (Dual)	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	20dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-PO
MRF314 RF TRANS NPN 35V 211-07 MACOM Technology Solutions	335 In Stock	1 : £36.91000 Tray	-	Tray	Active	NPN	35V	-	-	13.5dB	30W	20 @ 1.5A, 5V	3.4A	-	Chassis Mount	211-07	211-07, Style 1
MRF454 RF TRANS NPN 18V 211-11 MACOM Technology Solutions	80 In Stock	1 : £54.79000 Tray	-	Tray	Active	NPN	18V	-	-	12dB	80W	40 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
MRF428 RF TRANS NPN 55V 211-11 MACOM Technology Solutions	80 In Stock	1 : £111.42000 Tray	-	Tray	Active	NPN	55V	-	-	15dB	150W	10 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
MRF448 RF TRANS NPN 50V 211-11 MACOM Technology Solutions	0 In Stock Check Lead Time	1 : £149.54000 Tray	-	Tray	Active	NPN	50V	-	-	14dB	250W	10 @ 5A, 10V	16A	-	Chassis Mount	211-11, Style 2	211-11, Style 2

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Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.