Bipolar RF Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

KSP10BU RF TRANS NPN 25V 650MHZ TO92-3 onsemi	4,732 In Stock 20,000 Factory	1 : £0.23000 Bulk	-	Bulk	Active	NPN	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5770 PBFREE RF TRANS NPN 15V 900MHZ TO92 Central Semiconductor Corp	42,117 In Stock	1 : £0.27000 Bulk	-	Bulk	Active	NPN	15V	900MHz	6dB @ 60MHz	-	625mW	50 @ 8mA, 1V	50mA	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5179 PBFREE RF TRANS NPN 12V 2GHZ TO72 Central Semiconductor Corp	623 In Stock	1 : £4.07000 Bulk	-	Bulk	Active	NPN	12V	2GHz	4.5dB @ 200MHz	15dB	200mW	25 @ 3mA, 1V	50mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2N2857 PBFREE RF TRANS NPN 15V 1.9GHZ TO72 Central Semiconductor Corp	2,472 In Stock	1 : £4.24000 Bulk	-	Bulk	Active	NPN	15V	1.9GHz	4.5dB @ 450MHz	-	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
SS9018HBU-FS RF 0.05A, VERY HIGH FREQUENCY BA Fairchild Semiconductor	348,226 Marketplace	11,539 : £0.02296 Bulk	-	Bulk	Active	NPN	15V	1.1GHz	-	-	400mW	28 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SS9018FBU RF 0.05A, VERY HIGH FREQUENCY BA Fairchild Semiconductor	100,000 Marketplace	11,539 : £0.02296 Bulk	-	Bulk	Active	NPN	15V	1.1GHz	-	-	400mW	54 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SS9018GBU RF 0.05A, VERY HIGH FREQUENCY BA Fairchild Semiconductor	80,000 Marketplace	8,876 : £0.02297 Bulk	-	Bulk	Active	NPN	15V	1.1GHz	-	-	400mW	72 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3

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Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.