Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9530PBF MOSFET P-CH 100V 12A TO220AB Vishay Siliconix	10,732 In Stock	1 : £2.01000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	10V	300mOhm @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	860 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD110PBF MOSFET N-CH 100V 1A 4DIP Vishay Siliconix	4,168 In Stock	1 : £1.76000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	540mOhm @ 600mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9020PBF MOSFET P-CH 60V 1.6A 4DIP Vishay Siliconix	1,288 In Stock	1 : £1.90000 Tube	-	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	10V	280mOhm @ 960mA, 10V	4V @ 1µA	19 nC @ 10 V	±20V	570 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9110PBF MOSFET P-CH 100V 700MA 4DIP Vishay Siliconix	0 In Stock	2,500 : £0.49343 Bulk	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	700mA (Ta)	10V	1.2Ohm @ 420mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRLD024PBF MOSFET N-CH 60V 2.5A 4DIP Vishay Siliconix	0 In Stock	2,500 : £0.63566 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	2.5A (Ta)	4V, 5V	100mOhm @ 1.5A, 5V	2V @ 250µA	18 nC @ 5 V	±10V	870 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.