Single FETs, MOSFETs

Results: 4
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
BCV27
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
18,364
In Stock
1 : £0.38000
Cut Tape (CT)
3,000 : £0.08806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SIS176LDN-T1-GE3
SIS412DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
30,387
In Stock
1 : £0.55000
Cut Tape (CT)
3,000 : £0.17218
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
DFN2020MD-6
PMPB29XPEAX
MOSFET P-CH 20V 5A DFN2020MD-6
Nexperia USA Inc.
2,503
In Stock
1 : £0.52000
Cut Tape (CT)
3,000 : £0.12395
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5A (Ta)
1.8V, 4.5V
32.5mOhm @ 5A, 4.5V
1V @ 250µA
45 nC @ 4.5 V
±12V
2970 pF @ 10 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
855
In Stock
1 : £0.39000
Cut Tape (CT)
3,000 : £0.08444
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.8A (Ta)
2.5V, 4.5V
21mOhm @ 4.5A, 4.5V
900mV @ 250µA
15 nC @ 4.5 V
±10V
500 pF @ 8 V
-
1.25W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.