Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	EPC2067 TRANS GAN .0015OHM 40V 14LGA EPC	1,512 In Stock	1 : £4.31000 Cut Tape (CT) 1,000 : £1.65025 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	69A (Ta)	5V	1.55mOhm @ 37A, 5V	2.5V @ 18mA	22.3 nC @ 5 V	+6V, -4V	3267 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
	CSD17573Q5B MOSFET N-CH 30V 100A 8VSON Texas Instruments	0 In Stock Check Lead Time	1 : £1.55000 Cut Tape (CT) 2,500 : £0.47538 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Ta)	4.5V, 10V	1mOhm @ 35A, 10V	1.8V @ 250µA	64 nC @ 4.5 V	±20V	9000 pF @ 15 V	-	3.2W (Ta), 195W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.