Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SI7113ADN-T1-GE3 MOSFET P-CH 100V 10.8A PPAK Vishay Siliconix	43,841 In Stock	1 : £0.69000 Cut Tape (CT) 3,000 : £0.16697 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	10.8A (Tc)	4.5V, 10V	132mOhm @ 3.8A, 10V	2.6V @ 250µA	16.5 nC @ 10 V	±20V	515 pF @ 50 V	-	27.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SISS05DN-T1-GE3 MOSFET P-CH 30V 29.4A/108A PPAK Vishay Siliconix	304 In Stock	1 : £1.34000 Cut Tape (CT) 3,000 : £0.36295 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	29.4A (Ta), 108A (Tc)	4.5V, 10V	3.5mOhm @ 10A, 10V	2.2V @ 250µA	115 nC @ 10 V	+16V, -20V	4930 pF @ 15 V	-	5W (Ta), 65.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SIR880BDP-T1-RE3 N-CHANNEL 80-V (D-S) MOSFET POWE Vishay Siliconix	638 In Stock	1 : £1.37000 Cut Tape (CT) 3,000 : £0.37536 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	18.6A (Ta), 70.6A (Tc)	4.5V, 10V	6.5mOhm @ 10A, 10V	2.4V @ 250µA	66 nC @ 10 V	±20V	2930 pF @ 40 V	-	5W (Ta), 71.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI7469DP-T1-GE3 MOSFET P-CH 80V 28A PPAK SO-8 Vishay Siliconix	14,077 In Stock	1 : £2.50000 Cut Tape (CT) 3,000 : £0.79776 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	28A (Tc)	4.5V, 10V	25mOhm @ 10.2A, 10V	3V @ 250µA	160 nC @ 10 V	±20V	4700 pF @ 40 V	-	5.2W (Ta), 83.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPTC011N08NM5ATMA1 OPTIMOS 5 POWER MOSFET Infineon Technologies	6,257 In Stock	1 : £4.46000 Cut Tape (CT) 1,800 : £1.73929 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	42A (Ta), 408A (Tc)	6V, 10V	1.1mOhm @ 150A, 10V	3.8V @ 280µA	223 nC @ 10 V	±20V	17000 pF @ 40 V	-	3.8W (Ta), 375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
SIDR668ADP-T1-RE3 MOSFET N-CH 100V 23.3A/104A PPAK Vishay Siliconix	1,896 In Stock	1 : £2.37000 Cut Tape (CT) 3,000 : £0.74247 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	23.3A (Ta), 104A (Tc)	7.5V, 10V	4.8mOhm @ 20A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	3750 pF @ 50 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.