Single FETs, MOSFETs

Results: 9
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2803TRPBF
MOSFET N-CH 30V 1.2A SOT23
Infineon Technologies
58,677
In Stock
1 : £0.34000
Cut Tape (CT)
3,000 : £0.07430
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.2A (Ta)
4.5V, 10V
250mOhm @ 910mA, 10V
1V @ 250µA
5 nC @ 10 V
±20V
85 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
Infineon Technologies
96,017
In Stock
1 : £0.43000
Cut Tape (CT)
3,000 : £0.09530
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
65mOhm @ 3.7A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
633 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
Infineon Technologies
61,901
In Stock
1 : £0.43000
Cut Tape (CT)
3,000 : £0.09633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
1.8V, 4.5V
50mOhm @ 4.3A, 4.5V
950mV @ 250µA
15 nC @ 5 V
±8V
830 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML2502TRPBF
MOSFET N-CH 20V 4.2A SOT23
Infineon Technologies
33,090
In Stock
1 : £0.48000
Cut Tape (CT)
3,000 : £0.10744
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
2.5V, 4.5V
45mOhm @ 4.2A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
740 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXMP10A13FTA
MOSFET P-CH 100V 600MA SOT23-3
Diodes Incorporated
70,620
In Stock
3,300,000
Factory
1 : £0.67000
Cut Tape (CT)
3,000 : £0.16063
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
600mA (Ta)
6V, 10V
1Ohm @ 600mA, 10V
4V @ 250µA
3.5 nC @ 10 V
±20V
141 pF @ 50 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-252AA (DPAK)
IRLR120NTRPBF
MOSFET N-CH 100V 10A DPAK
Infineon Technologies
9,160
In Stock
1 : £1.12000
Cut Tape (CT)
2,000 : £0.30622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
4V, 10V
185mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23-3
DMG3415U-7
MOSFET P-CH 20V 4A SOT23-3
Diodes Incorporated
24,940
In Stock
1 : £0.35000
Cut Tape (CT)
3,000 : £0.06787
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.8V, 4.5V
39mOhm @ 4A, 4.5V
1V @ 250µA
9.1 nC @ 4.5 V
±8V
294 pF @ 10 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-243AA
RJP020N06T100
MOSFET N-CH 60V 2A MPT3
Rohm Semiconductor
15,237
In Stock
1 : £1.12000
Cut Tape (CT)
1,000 : £0.26848
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
2.5V, 4.5V
240mOhm @ 2A, 4.5V
1.5V @ 1mA
10 nC @ 4 V
±12V
160 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
MPT3
TO-243AA
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
73,514
In Stock
1 : £0.10000
Cut Tape (CT)
3,000 : £0.01725
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.