Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSH105,215 MOSFET N-CH 20V 1.05A TO236AB Nexperia USA Inc.	319,383 In Stock	1 : £0.23000 Cut Tape (CT) 3,000 : £0.05802 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	1.05A (Ta)	1.8V, 4.5V	200mOhm @ 600mA, 4.5V	570mV @ 1mA (Typ)	3.9 nC @ 4.5 V	±8V	152 pF @ 16 V	-	417mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
BSH103,215 MOSFET N-CH 30V 850MA TO236AB Nexperia USA Inc.	19,980 In Stock	1 : £0.26000 Cut Tape (CT) 3,000 : £0.05877 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	850mA (Ta)	2.5V	400mOhm @ 500mA, 4.5V	400mV @ 1mA (Min)	2.1 nC @ 4.5 V	±8V	83 pF @ 24 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
BSH103,235 MOSFET N-CH 30V 850MA TO236AB Nexperia USA Inc.	35,013 In Stock	1 : £0.33000 Cut Tape (CT) 10,000 : £0.06179 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	850mA (Ta)	2.5V	400mOhm @ 500mA, 4.5V	400mV @ 1mA (Min)	2.1 nC @ 4.5 V	±8V	83 pF @ 24 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SI4800BDY-T1-E3 MOSFET N-CH 30V 6.5A 8SO Vishay Siliconix	6,557 In Stock	1 : £0.38000 Cut Tape (CT) 2,500 : £0.24412 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.5A (Ta)	4.5V, 10V	18.5mOhm @ 9A, 10V	1.8V @ 250µA	13 nC @ 5 V	±25V	-	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DMN2028USS-13 MOSFET N-CH 20V 7.3A 8SO Diodes Incorporated	3,424 In Stock 5,000 Factory	1 : £0.44000 Cut Tape (CT) 2,500 : £0.15220 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	7.3A (Ta)	1.5V, 4.5V	20mOhm @ 9.4A, 4.5V	1.3V @ 250µA	11.6 nC @ 4.5 V	±8V	1000 pF @ 10 V	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4114DY-T1-E3 MOSFET N-CH 20V 20A 8SO Vishay Siliconix	10,824 In Stock	1 : £1.25000 Cut Tape (CT) 2,500 : £0.50786 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	20A (Tc)	4.5V, 10V	6mOhm @ 10A, 10V	2.1V @ 250µA	95 nC @ 10 V	±16V	3700 pF @ 10 V	-	2.5W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4866DY-T1-E3 MOSFET N-CH 12V 11A 8SO Vishay Siliconix	3,818 In Stock	1 : £2.16000 Cut Tape (CT) 2,500 : £0.65796 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	12 V	11A (Ta)	2.5V, 4.5V	5.5mOhm @ 17A, 4.5V	600mV @ 250µA (Min)	30 nC @ 4.5 V	±8V	-	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SCTWA90N65G2V-4 TRANS SJT N-CH 650V 119A HIP247 STMicroelectronics	0 In Stock Check Lead Time	1 : £22.97000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	119A (Tc)	-	24mOhm @ 50A, 18V	5V @ 1mA	157 nC @ 18 V	+22V, -10V	3380 pF @ 400 V	-	565W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	HiP247™ Long Leads	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.