Single FETs, MOSFETs

Results: 3
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of 3
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
5,712,277
In Stock
1 : £0.25000
Cut Tape (CT)
3,000 : £0.04338
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.5V, 4.5V
235mOhm @ 800mA, 4.5V
1V @ 1mA
1 nC @ 4.5 V
±8V
55 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
-
-
Surface Mount
SSM
SC-75, SOT-416
SOT-23-3
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
36,249
In Stock
1 : £0.34000
Cut Tape (CT)
3,000 : £0.07370
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
TO-252AA (DPAK)
IRLR3110ZTRLPBF
MOSFET N-CH 100V 42A DPAK
Infineon Technologies
12,120
In Stock
1 : £2.01000
Cut Tape (CT)
3,000 : £0.60149
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
42A (Tc)
4.5V, 10V
14mOhm @ 38A, 10V
2.5V @ 100µA
48 nC @ 4.5 V
±16V
3980 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.