Single Bipolar Transistors

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBTA06LT1G
TRANS NPN 80V 0.5A SOT23-3
onsemi
405,524
In Stock
1 : £0.11000
Cut Tape (CT)
3,000 : £0.02130
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
225 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT 23-3
MMBTA56LT1G
TRANS PNP 80V 0.5A SOT23-3
onsemi
143,315
In Stock
1 : £0.13000
Cut Tape (CT)
3,000 : £0.02483
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
80 V
250mV @ 10mA, 100mA
100nA (ICBO)
100 @ 100mA, 1V
225 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N3904TA
TRANS NPN 40V 0.2A TO-92-3
onsemi
43,493
In Stock
2,000 : £0.04628
Tape & Box (TB)
1 : £0.21000
Cut Tape (CT)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.