Single Bipolar Transistors

Results: 4
Manufacturer
Diodes IncorporatedonsemiTaiwan Semiconductor Corporation
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA500 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V80 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA400mV @ 5mA, 50mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)100nA100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 1V100 @ 10mA, 1V100 @ 150mA, 10V
Power - Max
225 mW300 mW310 mW350 mW
Frequency - Transition
100MHz250MHz300MHz
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
SOT-23SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

Showing
of 4
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBT2222A-7-F
TRANS NPN 40V 0.6A SOT23-3
Diodes Incorporated
1,308,254
In Stock
28,137,000
Factory
1 : £0.08000
Cut Tape (CT)
3,000 : £0.01587
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
310 mW
300MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SOT-23-3
MMBT3906-7-F
TRANS PNP 40V 0.2A SOT23-3
Diodes Incorporated
125,174
In Stock
12,603,000
Factory
1 : £0.08000
Cut Tape (CT)
3,000 : £0.01572
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
250MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
97,201
In Stock
1 : £0.08000
Cut Tape (CT)
3,000 : £0.02138
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
100nA (ICBO)
100 @ 10mA, 1V
350 mW
250MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
SOT 23-3
SMMBTA06LT1G
TRANS NPN 80V 0.5A SOT23-3
onsemi
21,609
In Stock
1 : £0.14000
Cut Tape (CT)
3,000 : £0.03622
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
225 mW
100MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
Showing
of 4

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.