FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package
FF8MR12W1M1HB11BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	37 In Stock	1 : £78.91000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FF8MR12W1M1HS4PB11BPSA1 MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies	34 In Stock	1 : £97.85000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	100A (Tj)	8.1mOhm @ 100A, 18V	5.15V @ 40mA	297nC @ 18V	8800pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-EASY1B
FS33MR12W1M1HB11BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	27 In Stock	1 : £69.66000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
DF11MR12W1M1HFB67BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	38 In Stock	1 : £57.79000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FF17MR12W1M1HB70BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	26 In Stock	1 : £69.86000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FF6MR12KM1BOSA1 MOSFET 2N-CH 1200V 250A AG-62MM Infineon Technologies	0 In Stock 100 Marketplace	1 : £287.29000 Bulk	CoolSiC™	Bulk Tray	Obsolete	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	250A (Tc)	5.81mOhm @ 250A, 15V	5.15V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-62MM
FF08MR12W1MA1B11ABPSA1 MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies	8 In Stock	1 : £102.08000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	150A (Tj)	9.8mOhm @ 150A, 15V	5.55V @ 90mA	450nC @ 15V	16000pF @ 600V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-EASY1BM-2
FF4MR12W2M1HB11BPSA1 MOSFET 2N-CH 1200V 170A MODULE Infineon Technologies	15 In Stock	1 : £155.79000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	170A (Tj)	4mOhm @ 200A, 18V	5.15V @ 80mA	594nC @ 18V	17600pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	Module
FS13MR12W2M1HB70BPSA1 MOSFET 6N-CH 1200V 62.5A Infineon Technologies	10 In Stock	1 : £162.48000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	1200V (1.2kV)	62.5A (Tc)	11.7mOhm @ 62.5A, 18V	5.15V @ 28mA	200nC @ 18V	6050pF @ 800V	-	-	-	-	-	-	-
DF14MR12W1M1HFB67BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	24 In Stock	1 : £57.00000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FF11MR12W2M1HPB11BPSA1 MOSFET 1200V Infineon Technologies	18 In Stock	1 : £61.63000 Tray	CoolSiC™	Tray	Active	-	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	-	-	-
FF17MR12W1M1HB11BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	13 In Stock	1 : £52.04000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FF17MR12W1M1HPB11BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	22 In Stock	1 : £56.75000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FF17MR12W1M1HB17BPSA1 MOSFET 2N-CH 1200V 50A AG-EASY1B Infineon Technologies	24 In Stock	1 : £55.44000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	50A (Tj)	16.2mOhm @ 50A, 18V	5.15V @ 20mA	149nC @ 18V	4400pF @ 800V	20mW	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	AG-EASY1B
FF7MR12W1M1HB17BPSA1 MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies	24 In Stock	1 : £106.14000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	105A (Tj)	5.8mOhm @ 120A, 18V	5.15V @ 56mA	400nC @ 18V	12100pF @ 800V	20mW	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	AG-EASY1B
FF6MR12W2M1HB11BPSA1 MOSFET 2N-CH 1200V 145A MODULE Infineon Technologies	16 In Stock	1 : £119.61000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	145A (Tj)	5.4mOhm @ 150A, 18V	5.15V @ 60mA	446nC @ 18V	13200pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	Module
FF3MR12KM1HHPSA1 MOSFET 2N-CH 1200V 190A AG62MMHB Infineon Technologies	19 In Stock	1 : £297.95000 Box	CoolSiC™	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	190A (Tc)	4.44mOhm @ 280A, 18V	5.1V @ 112mA	800nC @ 18V	24200pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	AG-62MMHB
FF3MR12KM1HPHPSA1 MOSFET 2N-CH 1200V 220A AG62MMHB Infineon Technologies	13 In Stock	1 : £302.12000 Box	CoolSiC™	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	220A	4.44mOhm @ 280A, 18V	5.1V @ 112mA	800nC @ 18V	24200pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	AG-62MMHB
FF2MR12KM1HPHPSA1 MOSFET 2N-CH 1200V AG-62MMHB Infineon Technologies	5 In Stock	1 : £332.62000 Tray	CoolSiC™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-62MMHB
FF2MR12KM1HOSA1 MOSFET 2N-CH 1200V 500A AG-62MM Infineon Technologies	13 In Stock	Obsolete	CoolSiC™	Tray	Obsolete	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-62MM
FF2600UXTR33T2M1BPSA1 MOSFET 2N-CH 3300V AG-XHP2K33 Infineon Technologies	1 In Stock	1 : £4,694.30000 Box	CoolSiC™	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	3300V (3.3kV)	720A (Tc)	3.1mOhm @ 750A, 15V	5.55V @ 675mA	3750nC @ 15V	152000pF @ 1.8kV	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	AG-XHP2K33
FF2000UXTR33T2M1BPSA1 MOSFET 2N-CH 3300V 9AG-XHP2K33 Infineon Technologies	1 In Stock	1 : £6,038.71000 Box	CoolSiC™	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	3300V (3.3kV)	925A (Tc)	2.4mOhm @ 1kA, 15V	5.55V @ 900mA	5000nC @ 15V	203000pF @ 1.8kV	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	AG-XHP2K33
FF6MR12KM1PHOSA1 MOSFET 2N-CH 1200V 250A AG-62MM Infineon Technologies	0 In Stock	Obsolete	CoolSiC™	Tray	Obsolete	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	250A (Tc)	5.81mOhm @ 250A, 15V	5.15V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-62MM
FF3MR12KM1PHOSA1 MOSFET 2N-CH 1200V 375A AG-62MM Infineon Technologies	0 In Stock	Obsolete	CoolSiC™	Tray	Obsolete	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	375A (Tc)	2.83mOhm @ 375A, 15V	5.15V @ 168mA	1000nC @ 15V	29800pF @ 25V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-62MM
FF3MR12KM1HOSA1 MOSFET 2N-CH 1200V 375A AG-62MM Infineon Technologies	0 In Stock	Obsolete	CoolSiC™	Tray	Obsolete	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	375A (Tc)	2.83mOhm @ 375A, 15V	5.15V @ 168mA	1000nC @ 15V	29800pF @ 25V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	AG-62MM

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.

FET, MOSFET Arrays

FET, MOSFET Arrays

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