FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SI3900DV-T1-E3 MOSFET 2N-CH 20V 2A 6TSOP Vishay Siliconix	33,724 In Stock	1 : £0.91000 Cut Tape (CT) 3,000 : £0.22789 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	2A	125mOhm @ 2.4A, 4.5V	1.5V @ 250µA	4nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SIZF640DT-T1-GE3 MOSFET 2N-CH 40V 41A PWRPAIR Vishay Siliconix	0 In Stock Check Lead Time	1 : £3.00000 Cut Tape (CT) 6,000 : £0.99760 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	41A (Ta), 159A (Tc)	1.37mOhm @ 15A, 10V	2.4V @ 250µA	106nC @ 10V	5750pF @ 20V	4.2W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerDFN	PowerPAIR® 6x5FS

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.