FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package
SI7997DP-T1-GE3 MOSFET 2P-CH 30V 60A PPAK SO8 Vishay Siliconix	18,331 In Stock	1 : £2.26000 Cut Tape (CT) 3,000 : £0.70710 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	30V	60A	5.5mOhm @ 20A, 10V	2.2V @ 250µA	160nC @ 10V	6200pF @ 15V	46W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
BSS138BKS,115 MOSFET 2N-CH 60V 0.32A 6TSSOP Nexperia USA Inc.	329,806 In Stock	1 : £0.30000 Cut Tape (CT) 3,000 : £0.05442 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	320mA	1.6Ohm @ 320mA, 10V	1.6V @ 250µA	0.7nC @ 4.5V	56pF @ 10V	445mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
IPG20N06S4L26ATMA1 MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies	11,840 In Stock	1 : £1.24000 Cut Tape (CT) 5,000 : £0.30755 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	20A	26mOhm @ 17A, 10V	2.2V @ 10µA	20nC @ 10V	1430pF @ 25V	33W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-PowerVDFN	PG-TDSON-8-4

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.