FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
QS5K2TR MOSFET 2N-CH 30V 2A TSMT5 Rohm Semiconductor	133,147 In Stock	1 : £0.77000 Cut Tape (CT) 3,000 : £0.16000 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	Logic Level Gate	30V	2A	100mOhm @ 2A, 4.5V	1.5V @ 1mA	3.9nC @ 4.5V	175pF @ 10V	1.25W	150°C (TJ)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSMT5
UM6J1NTN MOSFET 2P-CH 30V 0.2A UMT6 Rohm Semiconductor	7,765 In Stock	1 : £0.59000 Cut Tape (CT) 3,000 : £0.12143 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	200mA	1.4Ohm @ 200mA, 10V	2.5V @ 1mA	-	30pF @ 10V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
SSM6P40TU,LF MOSFET 2P-CH 30V 1.4A UF6 Toshiba Semiconductor and Storage	13,901 In Stock	1 : £0.47000 Cut Tape (CT) 3,000 : £0.09548 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate, 4V Drive	30V	1.4A (Ta)	226mOhm @ 1A, 10V	2V @ 1mA	2.9nC @ 10V	120pF @ 15V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
US6J11TR MOSFET 2P-CH 12V 1.3A TUMT6 Rohm Semiconductor	5,856 In Stock	1 : £0.76000 Cut Tape (CT) 3,000 : £0.16761 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	12V	1.3A	260mOhm @ 1.3A, 4.5V	1V @ 1mA	2.4nC @ 4.5V	290pF @ 6V	320mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.