TO-220
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTP2N80

Digi-Key Part Number
IXTP2N80-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTP2N80
Supplier
Description
MOSFET N-CH 800V 2A TO220AB
Detailed Description
N-Channel 800 V 2A (Tc) 54W (Tc) Through Hole TO-220-3
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
IXYS
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
California Prop 65
Warning Information
Additional Resources
AttributeDescription
Standard Package50
Substitutes (2)
Part No.ManufacturerQuantity AvailableDigi-Key Part No.Unit PriceSubstitute Type
IRFBE20PBFVishay Siliconix1,000IRFBE20PBF-ND£1.19000Similar
STP2N80K5STMicroelectronics1,835497-14279-5-ND£0.89000Similar