TK040N65Z Superjunction 650 V MOSFET

Toshiba's TK040N65Z high-efficiency DC-DC converters/switching voltage regulators

Image of Toshiba's TK040N65Z Superjunction 650 V MOSFETToshiba Electronics' TK040N65Z series of next-generation 650 V power MOSFETs are intended for use in server power supplies in data centers, solar (PV) power conditioners, uninterruptible power systems (UPS), and other industrial applications.

The first device in the DTMOS VI series is the TK040N65Z, a 650 V device that supports continuous drain currents (ID) up to 57 A and 228 A when pulsed (IDP).

The device offers an ultra-low drain-source on-resistance RDS(ON) of 0.04 Ω (0.033 Ω typ.) which reduces losses in power applications. The enhancement mode device is suitable for use in modern high-speed power supplies, due to the reduced capacitance in the design.

Power supply efficiency is improved because of reductions in the key performance index/figure of merit (FoM) – RDS(ON) x Qgd. The TK040N65Z shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36% as measured in a 2.5 kW PFC circuit.

Features and Benefits Applications
  • Lower RDS(ON) × Qgd allows switching power supplies to improve the efficiency
  • Data centers (server power supplies)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems

TK040N65Z Superjunction 650 V MOSFET

ImageManufacturer Part NumberDescriptionFET TypeCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Available QuantityView Details
MOSFET N-CH 650V 57A TO247TK040N65Z,S1FMOSFET N-CH 650V 57A TO247N-Channel57A (Ta)10V0View Details
Published: 2018-09-25