SIP32431, SIP32432 Datasheet by Vishay Siliconix

VISHAY. www.vishay.com/doc?99912 ® RoHS wwuw mom ms: gowenctechsugpanfllvlshayxom www.v\shay.com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 1Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
10 pA, Ultra Low Leakage and Quiescent Current,
Load Switch with Reverse Blocking
DESCRIPTION
The SiP32431 and SiP32432 are ultra low leakage and
quiescent current slew rate controlled high side switches
with reverse blocking capability. The switches are of a low
on resistance p-channel MOSFET that supports continuous
current up to 1.4 A.
The SiP32431 and SiP32432 operate with an input voltage
from 1.5 V to 5.5 V.
The SiP32431 and SiP32432 feature low input logic level to
interface with low control voltage from microprocessors.
The SiP32431 is of logic high enable control, while SiP32432
is of logic low enable control. Both devices have a very low
operating current, typically 10 pA at 3.3 V power supply.
The SiP32431 and SiP32432 are available in lead (Pb)-free
package options including 6 pin SC-70-6, and 4 pin TDFN4
1.2 mm x 1.6 mm DFN4 packages. The operation
temperature range is specified from -40 °C to +85 °C.
The SiP32431 and SiP32432 compact package options,
operation voltage range, and low operating current make it
a good fit for battery power applications.
FEATURES
1.5 V to 5.5 V input voltage range
No bias power rail required
Low on-resistance RDS(on),
typically 105 m at 5 V and 135 m at 3 V for
TDFN4 1.2 mm x 1.6 mm package
Typical 147 m at 5 V and 178 m at 3 V for
SC-70-6 package
Slew rate controlled turn-on time: 100 µs
Ultra low leakage and quiescent current:
- V
IN quiescent current = 0.01 nA
- V
IN shutdown leakage = 0.20 nA
Reverse blocking capability
SC-70-6 and TDFN4 1.2 mm x 1.6 mm packages
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Wireless sensor network
Smart meters
• Wearable
Internet of things
Portable medical devices
Security systems
Battery powered devices
Portable Instruments
TYPICAL APPLICATION CIRCUIT
Fig. 1 - SiP32431, SiP32432 Typical Application Circuit
Notes
•x = lot code
Available
ORDERING INFORMATION
PART NUMBER MARKING ENABLE PACKAGE TEMPERATURE RANGE
SiP32431DR3-T1GE3 MAxx High enable SC-70-6
-40 °C to +85 °C
SiP32432DR3-T1GE3 MDxx Low enable
SiP32431DNP3-T1GE4 Dx High enable TDFN4 1.2 mm x 1.6 mm
SiP32432DNP3-T1GE4 Vx Low enable
SiP32431 / SiP32432
IN V
OUT
OUT
V
IN
GND
GND
GND
ON/OFF
ON/OFF
C
1 µF
IN
C
0.1 µF
OUT
VISHAY. gowenctechsugpanfilvlshayxom www.v\shay,com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 2Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
-GE3 denotes halogen-free and RoHS-compliant
Please use the SiP32431DR3-T1GE3 to replace SiP32431DR3-T1-E3
Notes
a. Device mounted with all leads and power pad soldered or welded to PC board
b. Derate 4.5 mW/°C above TA = 70 °C
c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating / conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Supply input voltage (VIN) -0.3 to +6
VEnable input voltage (VON/OFF) -0.3 to +6
Output voltage (VOUT)-0.3 to +6
Maximum continuous switch current (Imax.)SC-70-6 package 1.2
A
TDFN4 1.2 mm x 1.6 mm 1.4
Maximum pulsed current (IDM) VIN
(pulsed at 1 ms, 10 % duty cycle)
VIN 2.5 V 3
VIN < 2.5 V 1.6
ESD rating (HBM) 4000 V
Junction temperature (TJ) -40 to +125 °C
Thermal resistance (JA) a6 pin SC-70-6 b220 °C/W
4 pin TDFN4 1.2 mm x 1.6 mm c170
Power dissipation (PD) a6 pin SC-70- 6 b 250 mW
4 pin TDFN4 1.2 mm x 1.6 mm c324
RECOMMENDED OPERATING RANGE
PARAMETER LIMIT UNIT
Input voltage range (VIN) 1.5 to 5.5 V
Operating temperature range -40 to +85 °C
VISHAY. gowenctechsugpanfilvlshayxom www.v\shay,com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 3Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. The algebriac convention whereby the most negative value is a minimum and the most positive a maximum
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
c. For VIN outside this range consult typical on / off threshold curve
PIN CONFIGURATION
Fig. 2 - SC-70-6 Package Fig. 3 - TDFN4 1.2 mm x 1.6 mm Package
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS UNLESS SPECIFIED
VIN = 5, TA = -40 °C to +85 °C
(Typical values are at TA = 25 °C)
LIMITS
-40 °C to +85 °C UNIT
MIN. a TYP.
bMAX. a
Operating voltage c VIN 1.5 - 5.5 V
Quiescent current IQ
VIN = 3.3 V, Von/off = 3.3 V - 0.01 100
nA
VIN = 5 V, Von/off = 5 V - 0.05 1000
Off supply current IQ(off)
VIN = 3.3 V, Von/off = 0 V, OUT = open - 0.01 100
VIN = 5 V, Von/off = 0 V, OUT = open - - 1000
Off switch current ISD(off)
VIN = 3.3 V, Von/off = 0 V, OUT = 1 V - 0.2 100
VIN = 5 V, Von/off = 0 V, OUT = 0 V - - 1000
Reverse blocking current IRB VOUT = 5.5 V, VIN = 0, Von/off = inactive - 130 1000
On-resistance RDS(on)
VIN = 5 V, IL = 500 mA, TA = 25 °C SC-70-6 - 147 230
m
TDFN4 - 105
VIN = 4.2 V, IL = 500 mA, TA = 25 °C SC-70-6 - 155 250
TDFN4 - 110
VIN = 3 V, IL = 500 mA, TA = 25 °C SC-70-6 - 178 290
TDFN4 - 135
VIN = 1.8 V, IL = 500 mA, TA = 25 °C SC-70-6 - 275 480
TDFN4 - 230
VIN = 1.5 V, IL = 500 mA, TA = 25 °C SC-70-6 - 395 520
TDFN4 - 350
On-resistance temp.-coefficient TDRDS - 2800 - ppm/°C
On / off input low voltage cVIL
VIN 1.5 V to < 1.8 V - - 0.3
V
VIN 1.8 V to < 2.7 V - - 0.4
VIN 2.7 V to 5.5 V - - 0.6
On / off input low voltage c VIH
VIN 1.5 V to < 2.7 V 1.3 - -
VIN 2.7 V to < 4.2 V 1.5 - -
VIN 4.2 V to 5.5 V 1.8 - -
On / off input leakage ION/OFF
Von/off = 3.3 V - 0.014 100 nA
Von/off = 5.5 V - 0.042 1000
Output turn-on delay time td(on)
VIN = 5 V, Rload = 10 , TA = 25 °C
-2040
µsOutput turn-on rise time t(on) - 140 180
Output turn-off delay time td(off) -410
OUT 1
GND 2
ON/OFF 3
N/C
6
GND
5
IN
4
Top View
4
3
1
2
Bottom View
ON/OFF
IN
OUT
GND
GND
PIN DESCRIPTION
PIN NUMBER NAME FUNCTION
SC-70-6 TDFN4
4 3 IN This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 µF capacitor
VISHAY. gowenctechsugpanfllvlshayxom www.v\shay.com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 4Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2, 5 2 GND Ground connection
3 4 ON / OFF Enable input
1 1 OUT This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor
PIN DESCRIPTION
PIN NUMBER NAME FUNCTION
SC-70-6 TDFN4
VISHAY. gowenctechsugpanfllvlshayxom www.v\shay,com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 5Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
Fig. 4 - Quiescent Current vs. Input Voltage
Fig. 5 - Off Switch Current vs. Input Voltage
Fig. 6 - Quiescent Current vs. Temperature
Fig. 7 - Off Switch Current vs. Temperature
Fig. 8 - RDS(on) vs. VIN for SC-70-6 Package
Fig. 9 - RDS(on) vs. Input Voltage
01.5 2.0 2.5 3.5 4.5 5.53.0 4.0 5.0
0.04
0.02
0.06
0.08
0.10
0.12
V
IN
(V)
I
Q
- Quiescent Current (nA)
0
1.5 2.0 2.5 3.5 5.0 6.03.0 4.0 5.54.5
150
50
250
200
100
300
350
V
IN
(V)
I
SD(OFF)
- Off Switch Current (nA)
0.001
- 40 - 20 0 40 80 10020 60
0.1
0.01
1
10
Temperature (°C)
I
Q
- Quiescent Current (nA)
V
IN
= 5 V
V
IN
= 3 V
0
- 40 - 20 0 40 10020 60 80
150
50
250
200
100
300
Temperature (°C)
I
SD(OFF)
- Off Switch Current (nA)
V
IN
= 5 V
1.0 1.5 2.0 3.0 4.0 5.52.5 3.5 4.5 5.0
V
IN
(V)
R
DS
- On-Resistance (mΩ)
50
100
150
200
250
300
350
400
450
500
550
for SC70-6 package
I
L
= 1.2 A
I
L
= 500 mA
I
L
= 100 mA
50
1.5 2.0 2.5 3.5 5.53.0 4.0 4.5 5.0
250
100
450
350
150
550
200
400
300
500
V
IN
(V)
R
DS
- On-Resistance (mΩ)
I
L
= 1.2 A
I
L
= 100 mA
I
L
= 500 mA
for TDFN4 package
VISHAY. m!) m!) gowenctechsugpanfllvlshayxom www.v\shay,com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 6Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
Fig. 10 - Reverse Blocking Current vs. VOUT
Fig. 11 - RDS(on) vs. Temperature
Fig. 12 - RDS(on) vs. Temperature
Fig. 13 - Reverse Blocking Current vs. Temperature
Fig. 14 - On / Off Threshold vs. Input Voltage
Fig. 15 - IEN Current vs. Temperature
VOUT (V)
IRB - Reverse Blocking Current (nA)
0.01
0.1
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VIN = 0 V
- 40 - 20 0 40 80 10020 60
Temperature (°C)
R
DS
- On-Resistance (mΩ)
120
130
140
150
160
170
180
190
200
210
220
V
IN
= 5 V
V
IN
= 3 V
I
LOAD
= 500 mA
for SC70-6 package
60
- 40 - 20 0 40 10020 60 80
140
80
100
180
120
160
Temperature (°C)
RDS - On-Resistance (mΩ)
VIN = 5 V
VIN = 3 V
ILOAD = 500 mA
for TDFN4 package
- 40 - 20 0 40 10020 60 80
Temperature (°C)
IRB - Reverse Blocking Current (nA)
0
100
200
300
400
500
600
VOUT = 5.5 V
VIN = 0 V
0.4
1.5 2.0 2.5 3.5 6.03.0 4.0 5.04.5 5.5
1.2
0.6
0.8
1.6
1.0
1.4
V
IN
(V)
On/Off Threshold Voltage (V)
V
IH
V
IL
10
100
1000
10000
0
5000
10,000
15 000
20 000
25 000
30 000
35 000
40 000
-40-20 0 20406080100120
Axis Title
1tli
IEN Current (pA)
Temperature (°C)
VEN = 5 V
VEN = 3.6 V
‘Rl=sn cL = 0,1 uF Ln low (200 mA/divJ 3 me (so pas/div.) 3 i ‘ , ONIDFF (2 V/div.) vow (2 Wm} ‘00, (200 mA/de fine (50 WW.) your (1 V/dw.) Time (2 us/aw.) law 1200 nut/diva ‘ ON/OFF 12 V/div.) Vow 12 V/div.) Tm 12 wow j low (200 mA/dw.) powenclechsuggen®wshamcom www.vishay.com/aoc791000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 7Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL WAVEFORMS
Fig. 16 - Switching (VIN = 3 V)
Fig. 17 - Switching (VIN = 5 V)
Fig. 18 - Turn-Off (VIN = 3 V)
Fig. 19 - Turn-Off (VIN = 5 V)
BLOCK DIAGRAM
Fig. 20 - Functional Block Diagram
Level
Shift
Tu r n - O n
Slew Rate
Control
GND
ON/OFF
OUT
IN
Reverse
Blocking
VISHAY. gowenctechsugpanfilvlshayxom www.v\shay,com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 8Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PCB LAYOUT
Fig. 21 - Top, TDFN4 1.2 mm x 1.6 mm PCB Layout Fig. 22 - Bottom, TDFN4 1.2 mm x 1.6 mm PCB Layout
DETAILED DESCRIPTION
The SiP32431 and SiP32432 are p-channel MOSFET power
switches designed for high-side slew rate controlled
load-switching applications. Once turned on, the slew-rate
control circuitry is activated and current is ramped in a linear
fashion until it reaches the level required for the output load
condition. This is accomplished by first elevating the gate
voltage of the MOSFET up to its threshold voltage and then
by linearly increasing the gate voltage until the MOSFET
becomes fully enhanced. At this point, the gate voltage is
then quickly increased to the full input voltage to reduce
RDS(on) of the MOSFET switch and minimize any associated
power losses.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required, a 1 µF
or larger capacitor for CIN is recommended in almost all
applications. The bypass capacitor should be placed as
physically close as possible to the input pin to be effective
in minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor or larger across VOUT and GND is
recommended to insure proper slew operation. COUT may
be increased without limit to accommodate any load
transient condition with only minimal affect on the SiP32431
and SiP32432 turn on slew rate time. There are no ESR or
capacitor type requirement.
Enable
The on / off pin is compatible with both TTL and CMOS logic
voltage levels.
Protection Against Reverse Voltage Condition
The SiP32431 and SiP32432 contain a body snatcher that
normally connects the body to the source (IN) when the
device is enabled. In case where the device is disabled but
the VOUT is higher than the VIN, the n-type body is switched
to out, reverse bias the body diode to prevent the current
from going back to the input.
Thermal Considerations
The physical limitations of the layout and assembly of the
device limit the maximum current levels as stated in the
Absolute Maximum Ratings table. However, another limiting
characteristic for the safe operating load current is the
thermal power dissipation of the package. To obtain the
highest power dissipation, the power pad of the TDFN4
package should be connected to a heat sink on the printed
circuit board.
The maximum power dissipation in any application is
dependent on the maximum junction temperature,
TJ (max.) = 125 °C, the junction-to-ambient thermal resistance
for the TDFN4 1.2 mm x 1.6 mm package, J-A = 170 °C/W,
and the ambient temperature, TA, which may be
formulaically expressed as:
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 324 mW.
So long as the load current is below the absolute maximum
limits, the maximum continuous switch current becomes a
function two things: the package power dissipation and the
RDS(on) at the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(on) at 25 °C
P (max.) TJ (max.) TA
JA
---------------------------------125 TA
170
----------------------
==
VISHAY. gowenclechsuggonfilvlshayxom www.v\shay.com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 9Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
occurs at an input voltage of 1.5 V and is equal to 520 m.
The RDS(on) at 70 °C can be extrapolated from this data using
the following formula
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 520 m x (1 + 0.0033 x (70 °C - 25 °C)) =
597 m
The maximum current limit is then determined by
which in case is 0.74 A. Under the stated input voltage
condition, if the 0.74 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
ILOAD (max.)
P (max.)
RDS on
----------------------
VISHAY. www.mshay cum/ggg’56597 gowenctechsugpanfllvlshayxom www.v\shay,com/doc?91000
SiP32431DN, SiP32431DR, SiP32432DN, SiP32432DR
www.vishay.com Vishay Siliconix
S20-0532-Rev. G, 06-Jul-2020 10 Document Number: 66597
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66597.
PRODUCT SUMMARY
Part number SiP32431DN SiP32431DR SiP32432DN SiP32432DR
Description
1.5 V to 5.5 V, 105
m, 10 pA IQ,
bidirectional off
isolation, EN active
high
1.5 V to 5.5 V, 147
m, 10 pA IQ,
bidirectional off
isolation, EN active
high
1.5 V to 5.5 V, 105
m, 10 pA IQ,
bidirectional off
isolation, EN active
low
1.5 V to 5.5 V, 147
m, 10 pA IQ,
bidirectional off
isolation, EN active
low
Configuration Single Single Single Single
Slew rate time (s) 140 140 140 140
On delay time (s) 20 20 20 20
Input voltage min. (V) 1.5 1.5 1.5 1.5
Input voltage max. (V) 5.5 5.5 5.5 5.5
On-resistance at input voltage min. (m) 350 395 350 395
On-resistance at input voltage max. (m) 105 147 105 147
Quiescent current at input voltage min. (µA) 0.000002 0.000002 0.000002 0.000002
Quiescent current at input voltage max. (µA) 0.00004 0.00004 0.00004 0.00004
Output discharge (yes / no) NoNoNoNo
Reverse blocking (yes / no) Yes Yes Yes Yes
Continuous current (A) 1.4 1.4 1.4 1.4
Package type TDFN4 SC-70-6 TDFN4 SC-70-6
Package size (W, L, H) (mm) 1.2 x 1.6 x 0.5 2.0 x 2.0 x 0.5 1.2 x 1.6 x 0.5 2.0 x 2.0 x 0.5
Status code 2222
Product type Slew rate Slew rate Slew rate Slew rate
Applications
Computers,
consumer, industrial,
healthcare,
networking, portable
Computers,
consumer, industrial,
healthcare,
networking, portable
Computers,
consumer, industrial,
healthcare,
networking, portable
Computers,
consumer, industrial,
healthcare,
networking, portable
VISHAY. I ‘ H Tag V‘ew W A b—l Slde V‘ew pawenctechsugpanalwshamom www.v\shay,com/doc?91000
Package Information
www.vishay.com Vishay Siliconix
Revision: 18-Apr-16 1Document Number: 65734
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TDFN4 1.2 x 1.6 Case Outline
Note
(1) The dimension depends on the leadframe that assembly house used.
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.45 0.55 0.60 0.017 0.022 0.024
A1 0.00 - 0.05 0.00 - 0.002
A3 0.15 REF. or 0.127 REF. (1) 0.006 or 0.005 (1)
b 0.20 0.25 0.30 0.008 0.010 0.012
D 1.15 1.20 1.25 0.045 0.047 0.049
D2 0.81 0.86 0.91 0.032 0.034 0.036
e 0.50 BSC 0.020
E 1.55 1.60 1.65 0.061 0.063 0.065
E2 0.45 0.50 0.55 0.018 0.020 0.022
K 0.25 typ. 0.010 typ.
L 0.25 0.30 0.35 0.010 0.012 0.014
ECN: T16-0143-Rev. C, 18-Apr-16
DWG: 5995
Top View Bottom View
Side View
21
43
34
12
D
E
A
A1
b
e
L
A3
E2
D2
K
Index Area
(D/2 x E/2)
Pin #1 ID
(Optional)
_ VISHAY
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1994.
2. Controlling dimensions: millimeters converted to inch dimensions are
not necessarily exact.
3. Dimension “D” does not include mold flash, protrusion or gate burr.
Mold flash, protrusion or gate burr shall not exceed 0.15 mm
(0.006 inch) per side.
4. The package top shall be smaller than the package bottom.
Dimension “D” and “E1” are determined at the outer most extremes
of the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top and
bottom of the plastic body.
C0.15 (0.006)
D
eB
D
e1
N5 N4 N3
N1 N2
E
E/2
b
Pin 1
E/1
E1/2
C0.15 (0.006)
C0.10 (0.004) MA BC
C0.10 (0.004)
A
C
SEATING
PLANE
A1
A2
SECTIION A-A
Base Metal
(b)
b1
c1 c
A A
DETAIL A
See Detail A
GAGE PLANE
0.15 (0.0059)
H
LU
U1
Package Information
Vishay Siliconix
Document Number: 73201
19-Nov-04
www.vishay.com
1
SC-70: 3/4/5/6-LEADS (PIC ONLY)
Pin LEAD COUNT
Code 3 4 5 6
N1 2 2
N2 2 2 3 3
N3 3 4 4
N4 3 5
N5 4 5 6
_ VISHAY
Package Information
Vishay Siliconix
www.vishay.com
2Document Number: 73201
19-Nov-04
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A0.80 1.10 0.031 0.043
A1 0.00 0.10 0.000 0.004
A2 0.80 0.90 1.00 0.031 0.035 0.040
b0.15 0.30 0.006 0.012
b1 0.15 0.20 0.25 0.006 0.008 0.010
c0.08 0.25 0.003 0.010
c1 0.08 0.13 0.20 0.003 0.005 0.008
D1.90 2.10 2.15 0.074 0.082 0.084
E2.00 2.10 2.20 0.078 0.082 0.086
E11.15 1.25 1.35 0.045 0.050 0.055
e0.65 BSC 0.0255 BSC
e11.30 BSC 0.0512 BSC
L0.26 0.36 0.46 0.010 0.014 0.018
U0_8_0_8_
U1 4_10_4_10_
ECN: S-42145—Rev. A, 22-Nov-04
DWG: 5941
Document Number: 66558 www.vishay.com
Revision: 05-Mar-10 1
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6
Recommended Minimum Pads
Dimensions in mm
12
3
4
0.30
0.50
0.86
0.20 0.50
2.0
0.20
0.55 0.55
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2019 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED