SiT8208 Datasheet by SiTime

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SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.02 Revised June 24, 2013
SiT8208
Ultra Performance Oscillator
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Features Applications
Any frequency between 1 and 80 MHz accurate to 6 decimal places SATA, SAS, Ethernet, PCI Express, video, WiFi
100% pin-to-pin drop-in replacement to quartz-based oscillators Computing, storage, networking, telecom, industrial control
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra short lead time
Electrical Characteristics[1]
Parameter Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f180MHz
Frequency Stability and Aging
Frequency Stability F_stab -10 +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
-20 +20 PPM
-25 +25 PPM
-50 +50 PPM
First year Aging F_aging -1.5 +1.5 PPM 25°C
10-year Aging -5 +5 PPM 25°C
Operating Temperature Range
Operating Temperature Range T_use -20 +70 °C Extended Commercial
-40 +85 °C Industrial
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for additional information.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current I_OD 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current I_std – 70 AVdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled
Down
––10AVdd = 1.8 V. ST = GND, output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle DC 45 55 %
Rise/Fall Time Tr, Tf 1.2 2 ns 15 pF load, 10% - 90% Vdd
Output Voltage High VOH 90% Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Output Voltage Low VOL– –10%Vdd
Input Characteristics
Input Voltage High VIH 70% Vdd Pin 1, OE or ST
Input Voltage Low VIL 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in 100 250 kPin 1, OE logic high or logic low, or ST logic high
2––MPin 1, ST logic low
dlil [3|
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Thermal Consideration
Electrical Characteristics[1] (Continued)
Parameter Symbol Min. Typ. Max. Unit Condition
Startup and Resume Timing
Startup Time T_start 7 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe 150 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume 6 10 ms In standby mode, measured from the time ST pin crosses 50%
threshold. Refer to Figure 5.
Jitter
RMS Period Jitter T_jitt – 1.5 2 ps
2 3 ps f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Pin Configuration
Pin Symbol Functionality
1 OE/ ST
Output
Enable
H or Open[2]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open[2]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
2 GND Power Electrical ground[3]
3 OUT Output Oscillator output
4 VDD Power Power supply voltage[3]
Notes:
2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) 260 °C
Junction Temperature 150 °C
Package
JA, 4 Layer Board
(°C/W)
JA, 2 Layer Board
(°C/W)
JC, Bottom
(°C/W)
7050 191 263 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
1 4
OE/ST VDD
32
GND OUT
Top View
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Notes:
4. Duty Cycle is computed as Duty Cycle = TH/Period.
5. SiT8208 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime.
Phase Noise Plot
Figure 1. Phase Noise, 10 MHz, 3.3V, LVCMOS Output
Test Circuit and Waveform
Figure 2. Test Circuit Figure 3. Waveform
10
310
410
510
6
-170
-160
-150
-140
-130
-120
-110
-100
Frequency Offset (Hz)
Phase Noise (dBc/Hz)
Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps
4
1
3
2
0.1µF
Power
Supply
OE/ST Function
Test
Point
15pF
(including probe
and fixture
capacitance)
Vdd Vout
Vdd
1k
90% Vdd
High Pulse
(TH)
50%
10% Vdd
Period
tftr
Low Pulse
(TL)
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Timing Diagram
Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only)
u
Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only)
Notes:
6. SiT8208 supports NO RUNT pulses and No glitches during startup or resume.
7. SiT8208 supports gated output which is accurate within rated frequency stability from the first cycle.
90% Vdd, 2.5/2,8/3.3V devices
95% Vdd, 1.8V devices Vdd Pin 4 Voltage
CLK Output
T_start
T_start: Time to start from power-off
NO Glitch first cycle
50% Vdd
Vdd ST Voltage
CLK Output
T_resume
T_resume: Time to resume from ST
50% Vdd
Vdd OE Voltage
CLK Output
T_OE
T_OE: Time to re-enable the clock output
50% Vdd
Vdd OE Voltage
CLK Output
T_OE: Time to put the output drive in High Z mode
HZ
T_OE
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Performance Plots
Figure 8. Idd vs Frequency Figure 9. RMS Period Jitter vs Frequency
Figure 10. Duty Cycle vs Frequency Figure 11. RMS Phase Jitter vs Frequency
Figure 12. Idd vs Temperature, 10 MHz Output Figure 13. Rise Time vs Temperature, 75 MHz Output
Note:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
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Programmable Drive Strength
The SiT8208 includes a programmable drive strength feature
to provide a simple, flexible tool to optimize the clock rise/fall
time for specific applications. Benefits from the programmable
drive strength feature are:
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
Improves the downstream clock receiver’s (RX) jitter by de-
creasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining full
swing with sharp edge rates.
For more detailed information about rise/fall time control and
drive strength selection, see the SiTime Applications Note
section; http://www.sitime.com/support/application-notes.
EMI Reduction by Slowing Rise/Fall Time
Figure 14 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the rise/fall times are very close to near-triangular waveform.
These results, for example, show that the 11th clock harmonic
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the period to 45% of the period.
Figure 14. Harmonic EMI reduction as a Function of
Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some
chipsets would require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. The SiT8208SiT8208
provides up to 3 additional high drive strength settings for very
fast rise/fall time. Refer to the Rise/Fall Time Tables to
determine the proper drive strength.
High Output Load Capability
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V SiT8208 device with
default drive strength setting, the typical rise/fall time is 1.15ns
for 15 pF output load. The typical rise/fall time slows down to
2.72ns when the output load increases to 45 pF. One can
choose to speed up the rise/fall time to 1.41ns by then
increasing the drive strength setting on the SiT8208.
The SiT8208 can support up to 60 pF or higher in maximum
capacitive loads with up to 3 additional drive strength settings.
Refer to the Rise/Tall Time Tables to determine the proper
drive strength for the desired combination of output load vs.
rise/fall time
SiT8208 Drive Strength Selection
Tables 1 through 5 define the rise/fall time for a given capac-
itive load and supply voltage.
1. Select the table that matches the SiT8208 nominal supply
voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the appli-
cation requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the desired
rise/fall times.
4. The left-most column represents the part number code for
the corresponding drive strength.
5. Add the drive strength code to the part number for ordering
purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 1 through
4, the maximum frequency the oscillator can operate with
guaranteed full swing of the output voltage over temperature
as follows:
Example 1
Calculate fMAX for the following condition:
Vdd = 1.8V (Table 1)
Capacitive Load: 30 pF
Desired Tr/f time = 3 ns (rise/fall time part number code = G)
Part number for the above example:
SiT8208AIGG2-18E-55.500000
Drive strength code is inserted here. Default setting is “-”
1357911
-80
-70
-60
-50
-40
-30
-20
-10
0
10
Harmonic number
Harmonic amplitude (dB)
trise=0.05
trise=0.1
trise=0.15
trise=0.2
trise=0.25
trise=0.3
trise=0.35
trise=0.4
trise=0.45
=1
6 x (Trise)
Max Frequency
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Rise/Fall Time (10% to 90%) vs CLOAD Tables
Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 4. Vdd = 3.3V Rise/Fall Times for Specific CLOAD
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L12.45 17.68 19.48 46.21 57.82
A6.50 10.27 16.21 23.92 30.73
R4.38 7.05 11.61 16.17 20.83
B3.27 5.30 8.89 12.18 15.75
S2.62 4.25 7.20 9.81 12.65
D2.19 3.52 6.00 8.31 10.59
T1.76 3.01 5.14 7.10 9.15
E1.59 2.59 4.49 6.25 7.98
U1.49 2.28 3.96 5.55 7.15
F1.22 2.10 3.57 5.00 6.46
W1.07 1.88 3.23 4.50 5.87
G1.01 1.64 2.95 4.12 5.40
X0.96 1.50 2.74 3.80 4.98
K0.92 1.41 2.56 3.52 4.64
Y0.88 1.34 2.39 3.25 4.32
Q0.86 1.29 2.24 3.04 4.06
Z or "-": Default 0.82 1.24 2.07 2.89 3.82
M0.77 1.20 1.94 2.72 3.61
N0.66 1.15 1.84 2.58 3.41
P0.51 1.09 1.76 2.45 3.24
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L8.68 13.59 18.36 32.70 42.06
A4.42 7.18 11.93 16.60 21.38
R2.93 4.78 8.15 11.19 14.59
B2.21 3.57 6.19 8.55 11.04
S1.67 2.87 4.94 6.85 8.80
D1.50 2.33 4.11 5.68 7.33
T1.06 2.04 3.50 4.84 6.26
E0.98 1.69 3.03 4.20 5.51
U0.93 1.48 2.69 3.73 4.92
F0.90 1.37 2.44 3.34 4.42
W0.87 1.29 2.21 3.04 4.02
G or "-": Default 0.67 1.20 2.00 2.79 3.69
X0.44 1.10 1.86 2.56 3.43
K0.38 0.99 1.76 2.37 3.18
Y0.36 0.83 1.66 2.20 2.98
Q0.34 0.71 1.58 2.07 2.80
Z0.33 0.65 1.51 1.95 2.65
M0.32 0.62 1.44 1.85 2.50
N0.31 0.59 1.37 1.77 2.39
P0.30 0.57 1.29 1.70 2.28
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L7.93 12.69 17.94 30.10 38.89
A4.06 6.66 11.04 15.31 19.80
R2.68 4.40 7.53 10.29 13.37
B2.00 3.25 5.66 7.84 10.11
S1.59 2.57 4.54 6.27 8.07
D1.19 2.14 3.76 5.21 6.72
T1.00 1.79 3.20 4.43 5.77
E0.94 1.51 2.78 3.84 5.06
U0.90 1.38 2.48 3.40 4.50
F0.87 1.29 2.21 3.03 4.05
W0.62 1.19 1.99 2.76 3.68
G or "-": Default 0.41 1.08 1.84 2.52 3.36
X0.37 0.96 1.72 2.33 3.15
K0.35 0.78 1.63 2.15 2.92
Y0.33 0.67 1.54 2.00 2.75
Q0.32 0.63 1.46 1.89 2.57
Z0.31 0.60 1.39 1.80 2.43
M0.30 0.57 1.31 1.72 2.30
N0.30 0.56 1.22 1.63 2.22
P0.29 0.54 1.13 1.55 2.13
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L7.18 11.59 17.24 27.57 35.57
A3.61 6.02 10.19 13.98 18.10
R2.31 3.95 6.88 9.42 12.24
B1.65 2.92 5.12 7.10 9.17
S1.43 2.26 4.09 5.66 7.34
D1.01 1.91 3.38 4.69 6.14
T0.94 1.51 2.86 3.97 5.25
E0.90 1.36 2.50 3.46 4.58
U0.86 1.25 2.21 3.03 4.07
F or "-": Default 0.48 1.15 1.95 2.72 3.65
W0.38 1.04 1.77 2.47 3.31
G0.36 0.87 1.66 2.23 3.03
X0.34 0.70 1.56 2.04 2.80
K0.33 0.63 1.48 1.89 2.61
Y0.32 0.60 1.40 1.79 2.43
Q0.32 0.58 1.31 1.69 2.28
Z0.30 0.56 1.22 1.62 2.17
M0.30 0.55 1.12 1.54 2.07
N0.30 0.54 1.02 1.47 1.97
P0.29 0.52 0.95 1.41 1.90
Rise/Fall Time Typ (ns)
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Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the SiT8208
low power oscillator for fast prototyping and real time custom-
ization of features. The field programmable devices (FP
devices) are available for all five standard SiT8208 package
sizes and can be configured to one’s exact specification using
the Time Machine II, an USB powered MEMS oscillator
programmer.
Customizable Features of the SiT8208 FP Devices Include
Any frequency between 1 – 110 MHz
Three frequency stability options, ±20 PPM, ±25 PPM, ±50
PPM
Two operating temperatures, -20 to 70°C or -40 to 85°C
Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and
3.3V
Output drive strength
For more information regarding SiTime’s field programmable
solutions, visit http://www.sitime.com/time-machine and
http://www.sitime.com/fp-devices.
SiT8208 is typically factory-programmed per customer
ordering codes for volume delivery.
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Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
10. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Dimensions and Patterns
Package Size – Dimensions (Unit: mm) [9] Recommended Land Pattern (Unit: mm) [10]
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
3.2 x 2.5 x 0.75 mm
5.0 x 3.2 x 0.75 mm
7.0 x 5.0 x 0.90 mm
YXXXX
2.7 ± 0.05 1.00
0.75 ± 0.05
2.4 ± 0.05
0.85
1.25
0.50
1.9
1.1
1.5
1.0
3.2 ± 0.05
2.5 ± 0.05
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.2
1.9
1. 4
1.2
5.0 ± 0.05
3.2 ± 0.05
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1
#2
#4
#3
#2
#1
#3
#4
YXXXX
2.54
1.5
1. 6
2.2
5.0 ± 0.05
1.4
1.1
5.08
7.0 ± 0.05
2.6
0.90 ± 0.10
YXXXX
5.08
3.81
2.2
2.0
PPPPPPPPP
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© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
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or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
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BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
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prohibited.
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Ultra Performance Oscillator
SiT8208
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number
Generator.
Additional Information
Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators
Devices that can be programmable in the field by
Time Machine II
http://www.sitime.com/products/field-programmable-oscillators
Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing
related info
http://www.sitime.com/component/docman/doc_download/85-manu
facturing-notes-for-sitime-oscillators
Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability
Performance Reports Additional performance data such as phase noise, current
consumption and jitter for selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes
Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes
Frequency
1.000000 to 80.000000 MHz
Part Family
“SiT8208”
Revision Letter
“A” is the silicon revision
Temperature Range
“I” Industrial, -40 to 85ºC
Voltage Supply
“18” for 1.8V ±5%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“33” for 3.3V ±10%
Packaging
Blank for Bulk
Feature Pin
“E” for Output Enable
“S” for Standby
“C” Ext. Commercial, -20 to 70ºC
Frequency Tolerance
“2” for ±25 PPM
“3” for ±50 PPM
Package
“2” 3.2 x 2.5
“3” 5.0 x 3.2
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
“8” 7.0 x 5.0
SiT8208AC -23-25E -75.123456T
“1” for ±20 PPM
“F” for ±10 PPM
“G” 2.5 x 2.0
Output Drive Strength
“–” Default (datasheet limits)
See Tables 1 to 5 for rise/fall
times
“L”
“A”
“R”
“B”
“S”
“D”
“T”
“E”
“U”
“F”
“W”
“G”
“X”
“K”
“Y”
“Q”
“Z”
“M”
“N”
“P”
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Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
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Silicon MEMS Outperforms Quartz Rev. 1.0 Revised January 16, 2013
Silicon MEMS Outperforms Quartz
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Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
Inherently better immunity of electrostatically driven
MEMS resonator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
Internal differential architecture for best common mode
noise rejection
Electrostatically driven MEMS resonator is more immune
to EMS
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
On-chip regulators and internal differential architecture for
common mode noise rejection
Best analog CMOS design expertise
Figure 4. Power Supply Noise Rejection[4]
Mean Time Between Failure (Million Hours)
14
16
28
38
500
0200 400 600
Pericom
TXC
Epson
IDT (Fox)
SiTime
SiTime
20X Better
1.5
3.5
3.0
8.0
0
2
4
6
8
10
1-Year 10-Year
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
Aging (±PPM)
SiTime
2X Better
- 39 - 40 - 42 - 43 - 45
- 73
- 90
- 80
- 70
- 60
- 50
- 40
- 30
Kyocera Epson TXC CW SiLabs SiTime
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Average Spurs (dB)
SiTime
54X Better
0.0
1.0
2.0
3.0
4.0
5.0
10 100 1,000 10,000
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Power Supply Noise Frequency (kHz)
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
SiTime
SiTime
3X Better
ETime'" Best Vibration Robustness Best Shock Robustness Kymera Ep SiLabs
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
design
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
design
Figure 6. Shock Robustness[6]
Vibration Sensitivity (ppb/g)
0.10
1.00
10.00
100.00
10 100 1000
Vibration Frequency (Hz)
Vibration Sensitivity vs. Frequency
SiTime TXC Epson Connor Winfield Kyocera SiLabs
SiTime
Up to 30x
Better
14.3
12.6
3.9
2.9 2.5
0.6
0
2
4
6
8
10
12
14
16
K
y
ocer
a
E
p
son TXC CW SiLab
s
SiTime
Differential XO Shock Robustness - 500 g
SiTime
Up to 25x
Better
Peak Frequency Deviation (PPM)
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
ETime'" hck here groducisuggon@silime.com r your feedback. Please chck d send to produclsuggon@si‘ime.com our online feedback form
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