SE30AFB-FJ Datasheet by Vishay General Semiconductor - Diodes Division

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SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com Vishay General Semiconductor
Revision: 08-May-2018 1Document Number: 89955
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifiers
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Very low profile - typical height of 0.95 mm
Ideal for automated placement
Oxide planar chip junction
Low forward voltage drop, low leakage current
ESD capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
MECHANICAL DATA
Case: SlimSMA (DO-221AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
Notes
(1) Mounted on 15 mm x 15 mm pad areas, 2 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 100 V, 200 V, 400 V, 600 V
IFSM 40 A
VF at IF = 3.0 A (TA = 125 °C) 0.86 V
IR10 µA
TJ max. 175 °C
Package SlimSMA (DO-221AC)
Circuit configuration Single
SlimSMA (DO-221AC)
Top View Bottom View
eSMP® Series
Cathode Anode
Design Tools
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SE30AFB SE30AFD SE30AFG SE30AFJ UNIT
Device marking code S3B S3D S3G S3J
Maximum repetitive peak reverse voltage VRRM 100 200 400 600 V
Maximum DC forward current IF (1) 3.0 A
IF (2) 1.4
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load IFSM 40 A
Operating junction and storage temperature range TJ, TSTG -55 to +175 °C
VISHAY. Hu on:D\odesAmencasmwshaymm DwodesAswafiiwshayxam DwodesEuvopefilvlshayLom www.v\shay,com/doc?91000
SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com Vishay General Semiconductor
Revision: 08-May-2018 2Document Number: 89955
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Notes
(1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance RθJA - junction to ambient
(2) Mounted on 15 mm x 15 mm pad areas, 2 oz. FR4 PCB; RθJM - junction to mount
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 1.5 A TA = 25 °C
VF (1)
0.91 -
V
IF = 3.0 A 0.97 1.1
IF = 1.5 A TA = 125 °C 0.79 -
IF = 3.0 A 0.86 0.98
Reverse current Rated VR
TA = 25 °C IR (2) -10
µA
TA = 125 °C 13 100
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.5 - µs
Typical junction capacitance 4.0 V, 1 MHz CJ19 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SE30AFB SE30AFD SE30AFG SE30AFJ UNIT
Typical thermal resistance RθJA (1) 125 °C/W
RθJM (2) 12
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 kΩVCH3B > 8 kV
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SE30AFJ-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel
SE30AFJ-M3/6B 0.032 6B 14 000 13" diameter plastic tape and reel
SE30AFJHM3/6A (1) 0.032 6A 3500 7" diameter plastic tape and reel
SE30AFJHM3/6B (1) 0.032 6B 14 000 13" diameter plastic tape and reel
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SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com Vishay General Semiconductor
Revision: 08-May-2018 3Document Number: 89955
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Transient Thermal Impedance
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
0 25 50 75 100 125 150 175
DC Forward Rectified Current (A)
Mount Temperature (°C)
TMmeasured at cathode band
terminal PCB mount
TA= 25 °C
TM = 141 °C, RthM = 12 °C/W
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
00.511.522.533.5
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
100
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A= 150 °C
T
A= 25 °C
T
A= 75 °C
T
A= 125 °C
TA= 175 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 175 °C
1
10
100
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
= 50 mV
p
-
p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
— VISHAY. SE30AFB, SE30AFD, SE30AFG, SE30AFJ V www.vishay-com Vishay General Semiconductor Epoxy pIInIed cIqul board Fm copper Ihlckness ; 70 um Thermal Reslslance 1°C/W) Scu Tami) an 20 an an an we Copper Pad Areas (may FIg. 7 , Thermal ResIsIanCe Junctlon Io Amblem vs. Coppev Fad Aveas PACKAGE OUTLINE DIMENSIONS In Inches (mIIIimeters) e —.— ) REVISION: OflrMayVZOIB 4 Document Number: 89955 For techmcaI quesIIorIs wIthIn your veglon: DIodesAmencas@wshay.cam, DIodesAsIa@vIshay.com. DIOdesEuvoge®vIshay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT To SPECIFIC DISCLAIMERS SET FORTH AT www.VIshay.com/doc?91000
SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com Vishay General Semiconductor
Revision: 08-May-2018 4Document Number: 89955
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Copper Pad Areas (cm
2
)
Thermal Resistance (°C/W)
0
20
40
60
80
100
120
140
0.0 2.0 4.0 6.0 8.0 10.0
Scu (cm)
Epoxy printed
circiut board FR4
copper
thickness = 70 µm
SlimSMA (DO-221AC)
Cathode Band
0.106 (2.70)
0.098 (2.50)
0.047 (1.20)
0.030 (0.75)
0.047 (1.20)
MIN.
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.060 (1.52)
MIN.
0.057 (1.45)
0.049 (1.25)
0.039 (1.00)
0.035 (0.90)
0.012 (0.30)
0.006 (0.15)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
Typ.: 0.019 (0.48)
Mounting Pad Layout
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