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MMBT5550L-51L, SMMBT5551L Datasheet

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Datasheet

© Semiconductor Components Industries, LLC, 1994
October, 2016 Rev. 12
1Publication Order Number:
MMBT5550LT1/D
MMBT5550L, MMBT5551L
High Voltage Transistors
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
MMBT5550
MMBT5551
VCEO 140
160
Vdc
CollectorBase Voltage
MMBT5550
MMBT5551
VCBO 160
180
Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC600 mAdc
Electrostatic Discharge
Human Body Model
Machine Model
ESD
> 8000
> 400
V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) @TA = 25°C
Derate Above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate Above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
1
x1x M G
G
SOT23 (TO236)
CASE 318
STYLE 6
1
2
3
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT5550LT1G SOT23
(PbFree)
3,000 / Tape &
Reel
MMBT5551LT1G SOT23
(PbFree)
3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
x1x = Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
SMMBT5551LT1G SOT23
(PbFree)
3,000 / Tape & Reel
MMBT5551LT3G SOT23
(PbFree)
10,000 / Tape &
Reel
SMMBT5551LT3G SOT23
(PbFree)
10,000 / Tape &
Reel
MMBT5550LT3G SOT23
(PbFree)
10,000 / Tape &
Reel
MMBT5550L, MMBT5551L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBT5550
MMBT5551
V(BR)CEO 140
160
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0) MMBT5550
MMBT5551
V(BR)CBO 160
180
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 6.0
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) MMBT5550
(VCB = 120 Vdc, IE = 0) MMBT5551
(VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550
(VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551
ICBO
100
50
100
50
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
(IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
hFE 60
80
60
80
20
30
250
250
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
MMBT5551
VCE(sat)
0.15
0.25
0.20
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
MMBT5551
VBE(sat)
1.0
1.2
1.0
Vdc
Collector Emitter Cutoff
(VCB = 10 V) Both Types
(VCB = 75 V)
ICES
50
100
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5550L, MMBT5551L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
TJ = 125°C
-55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
10 mA 30 mA 100 mA
5.0
Figure 3. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
101
10-5
0.4 0.3 0.1
100
10-1
10-2
10-3
10-4
0.2 0 0.1 0.2 0.40.3 0.60.5
VCE = 30 V
TJ = 125°C
75°C
25°C
IC = ICES
, COLLECTOR CURRENT (A)μIC
REVERSE FORWARD
IC, COLLECTOR CURRENT (A)
0.30
0.001 0.01 0.1
150°C
IC/IB = 10
0.0001
Figure 4. VCE(sat)
0.25
0.20
0.10
0.05
0
VCE(sat), Coll-Emitt Saturation Voltage (V)
0.15
25°C
-55°C
MMBT5550L, MMBT5551L
www.onsemi.com
4
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
1.10
0.001 0.01 0.1
150°C
IC/IB = 10
0.0001
Figure 5. VBE(sat)
0.70
0.60
0.40
0.30
0.20
VBE(sat), Base-Emitt Saturation Voltage (V)
0.50
25°C
-55°C
0.80
0.90
1.00
IC, COLLECTOR CURRENT (A)
1.10
0.001 0.01 0.1
150°C
VCE = 10 V
0.0001
Figure 6. VBE(on)
0.70
0.60
0.40
0.30
0.20
VBE(on), Base-Emitter Voltage (V)
0.50
25°C
-55°C
0.80
0.90
1.00
IC, COLLECTOR CURRENT (mA)
2.5
qVC for VCE(sat)
qVB for VBE(sat)
Figure 7. Temperature Coefficients
TJ = - 55°C to +135°C
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
2.0
1.5
1.0
0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
TJ = 25°C
Figure 8. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
VBB
-8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
Figure 9. Switching Time Test Circuit
MMBT5550L, MMBT5551L
www.onsemi.com
5
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (mA)
1000
1.0 100.1
1
10
100
100 1000
VCE = 1 V
TA = 25°C
Figure 10. Current Gain Bandwidth Product
fT, Current Gain Bandwidth Product (Mhz)
VCE, COLLECTOR EMITTER VOLTAGE (V)
1
1.0 10
0.001
0.01
0.1
100 1000
10 mS
Figure 11. Safe Operating Area
IC, COLLECTOR CURRENT (A)
1.0 S
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
1000
0.3 1.0 10 20 30 50
0.50.2
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0 100 200
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
3.0 5.0
tr @ VCC = 30 V
td @ VEB(off) = 1.0 V
VCC = 120 V
Figure 12. Capacitances Figure 13. TurnOn Time
MMBT5550L, MMBT5551L
www.onsemi.com
6
PACKAGE DIMENSIONS
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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