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ESD9X3.3ST5G, SZESD9X3.3ST5G Series Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2012
October, 2017 Rev. 8
1Publication Order Number:
ESD9X3.3ST5G/D
ESD9X3.3ST5G Series,
SZESD9X3.3ST5G Series
ESD Protection Diode
MicroPackaged Diodes for ESD Protection
The ESD9X Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
Specification Features:
Low Clamping Voltage
Small Body Outline Dimensions:
0.039 x 0.024(1.0 mm x 0.60 mm)
Low Body Height: 0.017 (0.43 mm) Max
Standoff Voltage: 3.3 V 12 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC6100042 Level 4 ESD Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These are PbFree Devices
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 6100042 (ESD) Contact
Air
±30
±30
kV
ESD Voltage Per Human Body Model
Per Machine Model
16
400
kV
V
Total Power Dissipation on FR5 Board
(Note 1) @ TA = 25°C
PD150 mW
Junction and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Lead Solder Temperature Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
12
PIN 1. CATHODE
2. ANODE
Device Package Shipping
ORDERING INFORMATION
ESD9XxxST5G SOD923
(PbFree)
8000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
SOD923
CASE 514AA
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
X = Specific Device Code
M = Date Code
X M
SZESD9XxxST5G SOD923
(PbFree)
8000/Tape & Reel
SCALE 8:1
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @VR = 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters. UniDirectional
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM
(V)
IR (mA)
@ VRWM
VBR (V)
@ IT
(Note 2) IT
Max IPP (A)
(Note 3)
VC (V)
@ Max IPP
(Note 3)
Ppk (W)
(8 x 20 ms)
C
(pF) VC
Max Max Min mA Max Typ Typ
Per IEC6100042
(Note 4)
ESD9X3.3ST5G A 3.3 2.5 5.0 1.0 9.8 10.4 102 80
Figures 1 and 2
(Note 5)
ESD9X5.0ST5G B 5.0 1.0 6.2 1.0 8.7 12.3 107 65
ESD9X7.0ST5G 5** 7.0 0.1 7.5 1.0 4.0 25 100 65
ESD9X12ST5G C 12 1.0 13.5 1.0 5.9 23.7 140 30
* Include SZ-prefix devices where applicable.
**Rotated 270 degrees.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveform per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
5. ESD9X5.0ST5G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 6100042
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 6100042
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
www.onsemi.com
3
IEC 6100042 Spec.
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC6100042 Waveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
Figure 3. IEC6100042 Spec
Figure 4. Diagram of ESD Test Setup
50 W
Cable
Device
Under
Test Oscilloscope
ESD Gun
50 W
The following is taken from Application Note
AND8308/D Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC6100042 waveform. Since the
IEC6100042 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
Figure 5. 8 x 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS
55 + 25
7.4
Figure 6. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (°C)
+ 150
7.2
7.1
7.0
6.9
6.8
6.3 55
20
Figure 7. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+25
16
12
8
4
0
BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ)
IR (nA)
7.3
+ 150
6.7
6.6
6.5
6.4
18
14
10
6
2
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
www.onsemi.com
5
PACKAGE DIMENSIONS
SOD923
CASE 514AA
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.39 0.43
b0.15 0.20 0.25
c0.07 0.12 0.17
D0.75 0.80 0.85
E0.55 0.60 0.65
0.95 1.00 1.05
L0.19 REF
HE
0.013 0.015 0.017
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
MIN NOM MAX
INCHES
D
E
b
c
A
2X
Y
X
0.08 XY
HE
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
21
2X
BOTTOM VIEW
L2
L
2X
TOP VIEW
SIDE VIEW
See Application Note AND8455/D for more mounting details
L2 0.05 0.10 0.15 0.002 0.004 0.006
1.20
2X
0.25
2X
0.36
PACKAGE
OUTLINE
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series
www.onsemi.com
6
SOD923
CASE 514AA
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.39 0.43
b0.15 0.20 0.25
c0.07 0.12 0.17
D0.75 0.80 0.85
E0.55 0.60 0.65
0.95 1.00 1.05
L0.19 REF
HE
0.013 0.015 0.017
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
MIN NOM MAX
INCHES
D
E
b
c
A
2X
Y
X
0.08 XY
HE
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
21
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
2X
BOTTOM VIEW
L2
L
2X
TOP VIEW
SIDE VIEW
See Application Note AND8455/D for more mounting details
L2 0.05 0.10 0.15 0.002 0.004 0.006
1.20
2X
0.25
2X
0.36
PACKAGE
OUTLINE
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