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Infineon Technologies
Silicon Carbide Schottky Diode
IXYS
Silicon Carbide Schottky Diode
 
IXYS-RF
Silicon Carbide Schottky Diode
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Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode

IXYS

IXYS' Silicon Carbide diodes provide extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with the low inductance DE-Series RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency converter applications.

Features
  • Ultra fast switching
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • Temperature Independent Switching Behavior
Applications
  • Solar inverter
  • Uninterruptible power supply (UPS)
  • Welding equipment
  • Switched-mode power supplies
  • Medical equipment
  • High speed rectifier
Specifications
  • Current - Average Rectified (Io) (per Diode):22A ~ 64A
  • Current - Reverse Leakage @ Vr:200µA ~ 800µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:20A ~ 60A
  • Diode Configuration:2 Independent
  • Diode Type:Silicon Carbide Schottky
  • Mounting Type:Chassis Mount
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Package / Case:SOT-227-4, miniBLOC
  • Packaging:Tube
  • Reverse Recovery Time (trr):0ns
  • Speed:No Recovery Time > 500mA (Io)
  • Supplier Device Package:SOT-227B
  • Voltage - DC Reverse (Vr) (Max):1200V
  • Voltage - Forward (Vf) (Max) @ If:1.8V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:1200V
Parts

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DCG85X1200NADCG85X1200NADIODE MOD SCHOTTKY 1200V SOT227B2 IndependentSilicon Carbide Schottky1200V43ASOT-227-4, miniBLOC
DCG100X1200NADCG100X1200NADIODE MOD SCHOTTKY 1200V SOT227B2 IndependentSilicon Carbide Schottky1200V49ASOT-227-4, miniBLOC
DCG130X1200NADCG130X1200NADIODE MOD SCHOTTKY 1200V SOT227B2 IndependentSilicon Carbide Schottky1200V64ASOT-227-4, miniBLOC
DCG45X1200NADCG45X1200NADIODE MOD SCHOTTKY 1200V SOT227B2 IndependentSilicon Carbide Schottky1200V22ASOT-227-4, miniBLOC

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